Monolayer doping of germanium with arsenic: A new chemical route to achieve optimal dopant activation

Simple item page
dc.contributor.authorKennedy, Noel
dc.contributor.authorGarvey, Shane
dc.contributor.authorMaccioni, Barbara
dc.contributor.authorEaton, Luke
dc.contributor.authorNolan, Michael
dc.contributor.authorDuffy, Ray
dc.contributor.authorMeaney, Fintan
dc.contributor.authorKennedy, Mary
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorLong, Brenda
dc.date.accessioned2020-09-30T11:45:54Z
dc.date.available2020-09-30T11:45:54Z
dc.date.issued2020-08-03
dc.date.updated2020-09-30T11:32:21Z
dc.description.abstractReported here is a new chemical route for the wet chemical functionalization of germanium (Ge), whereby arsanilic acid is covalently bound to a chlorine (Cl)-terminated surface. This new route is used to deliver high concentrations of arsenic (As) dopants to Ge, via monolayer doping (MLD). Doping, or the introduction of Group III or Group V impurity atoms into the crystal lattice of Group IV semiconductors, is essential to allow control over the electronic properties of the material to enable transistor devices to be switched on and off. MLD is a diffusion-based method for the introduction of these impurity atoms via surface-bound molecules, which offers a nondestructive alternative to ion implantation, the current industry doping standard, making it suitable for sub-10 nm structures. Ge, given its higher carrier mobilities, is a leading candidate to replace Si as the channel material in future devices. Combining the new chemical route with the existing MLD process yields active carrier concentrations of dopants (>1 × 1019 atoms/cm3) that rival those of ion implantation. It is shown that the dose of dopant delivered to Ge is also controllable by changing the size of the precursor molecule. X-ray photoelectron spectroscopy (XPS) data and density functional theory (DFT) calculations support the formation of a covalent bond between the arsanilic acid and the Cl-terminated Ge surface. Atomic force microscopy (AFM) indicates that the integrity of the surface is maintained throughout the chemical procedure, and electrochemical capacitance voltage (ECV) data shows a carrier concentration of 1.9 × 1019 atoms/cm3 corroborated by sheet resistance measurements.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKennedy, N., Garvey, S., Maccioni, B., Eaton, L., Nolan, M., Duffy, R., Meaney, F., Kennedy, M., Holmes, J. D. and Long, B. (2020) 'Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation', Langmuir, 36(34), pp. 9993-10002. doi: 10.1021/acs.langmuir.0c00408en
dc.identifier.doi10.1021/acs.langmuir.0c00408en
dc.identifier.endpage10002en
dc.identifier.issn0743-7463
dc.identifier.issued34en
dc.identifier.journaltitleLangmuiren
dc.identifier.startpage9993en
dc.identifier.urihttps://hdl.handle.net/10468/10611
dc.identifier.volume36en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.urihttps://pubs.acs.org/doi/10.1021/acs.langmuir.0c00408
dc.rights© 2020 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Langmuir, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.langmuir.0c00408en
dc.subjectGermanium (Ge)en
dc.subjectDensity functional theory (DFT)en
dc.subjectMonolayer doping (MLD)en
dc.subjectAtomic force microscopy (AFM)en
dc.subjectMonolayersen
dc.subjectHydrosilylationen
dc.subjectDopingen
dc.titleMonolayer doping of germanium with arsenic: A new chemical route to achieve optimal dopant activationen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 2 of 2
Thumbnail Image
Name:
Monolayer_Doping_of_Ge_with_As_Manuscript_Final_Revised.pdf
Size:
1.12 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
Thumbnail Image
Name:
la0c00408_si_001.pdf
Size:
325.1 KB
Format:
Adobe Portable Document Format
Description:
Supporting information
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Chemistry - Journal Articles
Tyndall National Institute - Journal Articles