Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors

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dc.check.date2020-09-26
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorDragoman, Mircea
dc.contributor.authorModreanu, Mircea
dc.contributor.authorPovey, Ian M.
dc.contributor.authorDinescu, Adrian
dc.contributor.authorDragoman, Daniela
dc.contributor.funderUnitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovariien
dc.date.accessioned2019-10-07T10:36:59Z
dc.date.available2019-10-07T10:36:59Z
dc.date.issued2019-09-26
dc.date.updated2019-10-07T10:11:54Z
dc.description.abstractWe have fabricated at wafer level field-effect-transistors (FETs) having as channel graphene monolayers transferred on a HfZrO ferroelectric, grown by atomic layer deposition on a doped Si (100) substrate. These FETs display either horizontal or vertical carrier transport behavior, depending on the applied gate polarity. In one polarity, the FETs behave as a graphene FET where the transport is horizontal between two contacts (drain and grounded source) and is modulated by a back-gate. Changing the polarity, the transport is vertical between the drain and the back-gate and, irrespective of the metallic contact type, Ti/Au or Cr/Au, the source-drain bias modulates the height of the potential barrier between HfZrO and the doped Si substrate, the carrier transport being described by a Schottky mechanism at high gate voltages and by a space-charge limited mechanism low gate voltages. Vertical transport is required by three-dimensional integration technologies for increasing the density of transistors on chip.en
dc.description.sponsorshipUnitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii (Project number PN-III-P4-ID-PCCF-2016-0033)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDragoman, M., Modreanu, M., Povey, I. M., Dinescu, A. and Dragoman, D. (2019) 'Reconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistors', Nanotechnology. doi: 10.1088/1361-6528/ab4832en
dc.identifier.doi10.1088/1361-6528/ab4832en
dc.identifier.eissn1361-6528
dc.identifier.issn1361-6528
dc.identifier.journaltitleNanotechnologyen
dc.identifier.urihttps://hdl.handle.net/10468/8718
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rights© 2019, IOP Publishing Ltd. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. After the embargo period, everyone is permitted to use copy and redistribute this article for non-commercial purposes only, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by-nc-nd/3.0en
dc.rights.urihttps://creativecommons.org/licences/by-nc-nd/3.0en
dc.subjectField-effect-transistoren
dc.subjectFETen
dc.subjectGrapheneen
dc.subjectVertical transporten
dc.subjectPolarityen
dc.titleReconfigurable horizontal-vertical carrier transport in graphene/HfZrO field-effect transistorsen
dc.typeArticle (peer-reviewed)en
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