Electron band alignment between (100)InP and atomic-layer deposited Al2O3

Simple item page
dc.contributor.authorChou, Hsing-Yi
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.authorStesmans, A.
dc.contributor.authorLin, H. C.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorNewcomb, Simon B.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:04:41Z
dc.date.available2017-07-28T11:04:41Z
dc.date.issued2010
dc.description.abstractEnergy barriers at interfaces of (100)InP with atomic-layer deposited Al2O3 are determined using internal photoemission of electrons. The barrier height between the top of the InP valence band and bottom of the alumina conduction band is found to be 4.05 +/- 0.10 eV corresponding to a conduction band offset of 2.7 eV. An interlayer associated with the oxidation of InP may result in a lower barrier for electron injection potentially leading to charge instability of the insulating stack. A wide-gap P-rich interlayer has a potential to reduce this degrading effect as compared to In-rich oxides. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3496039)en
dc.description.sponsorshipScience Foundation Ireland (Grant No. SFI/09/IN.1/I2633)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid132112
dc.identifier.citationChou, H.-Y., Afanas’ev, V. V., Stesmans, A., Lin, H. C., Hurley, P. K. and Newcomb, S. B. (2010) 'Electron band alignment between (100)InP and atomic-layer deposited Al2O3', Applied Physics Letters, 97(13), pp. 132112. doi: 10.1063/1.3496039en
dc.identifier.doi10.1063/1.3496039
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued13
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4330
dc.identifier.volume97
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3496039
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chou, H.-Y., Afanas’ev, V. V., Stesmans, A., Lin, H. C., Hurley, P. K. and Newcomb, S. B. (2010) 'Electron band alignment between (100)InP and atomic-layer deposited Al2O3', Applied Physics Letters, 97(13), pp. 132112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3496039en
dc.subjectOxidesen
dc.subjectInpen
dc.subjectOzoneen
dc.subjectIII-V semiconductorsen
dc.subjectGolden
dc.subjectAtomic layer depositionen
dc.subjectElectric fieldsen
dc.titleElectron band alignment between (100)InP and atomic-layer deposited Al2O3en
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3305.pdf
Size:
685.61 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles