Access to this article is restricted until 24 months after publication by request of the publisher.. Restriction lift date: 2019-12-06
Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires
| dc.check.date | 2019-12-06 | |
| dc.check.info | Access to this article is restricted until 24 months after publication by request of the publisher. | en |
| dc.contributor.author | Razavi, Pedram | |
| dc.contributor.author | Greer, James C. | |
| dc.date.accessioned | 2018-02-14T09:33:35Z | |
| dc.date.available | 2018-02-14T09:33:35Z | |
| dc.date.issued | 2017-12-06 | |
| dc.date.updated | 2018-02-14T09:23:20Z | |
| dc.description.abstract | Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures are calculated and properties relevant to nanoelectronic design are extracted including band gaps, effective masses, and density of states. The properties of these III-V nanowires are compared to silicon nanowires of comparable dimensions as a reference system. In nonpolar semiconductors, quantum confinement and surface chemistry are known to play a key role in the determination of nanowire electronic structure. InxGa1-xAs nanowires have in addition effects due to alloy stoichiometry on the cation sublattice and due to the polar nature of the cleaved nanowire surfaces. The impact of these additional factors on the electronic structure for these polar semiconductor nanowires is shown to be significant and necessary for accurate treatment of electronic structure properties. | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Accepted Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Razavi, P. and Greer, J. C. (2018) 'Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires', Materials Chemistry and Physics, 206, pp. 35-39. doi:10.1016/j.matchemphys.2017.12.006 | en |
| dc.identifier.doi | 10.1016/j.matchemphys.2017.12.006 | |
| dc.identifier.endpage | 39 | en |
| dc.identifier.issn | 0254-0584 | |
| dc.identifier.journaltitle | Materials Chemistry and Physics | en |
| dc.identifier.startpage | 35 | en |
| dc.identifier.uri | https://hdl.handle.net/10468/5457 | |
| dc.identifier.volume | 206 | en |
| dc.language.iso | en | en |
| dc.publisher | Elsevier | en |
| dc.relation.uri | http://www.sciencedirect.com/science/article/pii/S0254058417309471 | |
| dc.rights | © 2017 Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license. | en |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | en |
| dc.subject | InGaAs | en |
| dc.subject | Nanowires | en |
| dc.subject | DFT | en |
| dc.subject | Surface stoichiometry | en |
| dc.subject | Semiconductors | en |
| dc.title | Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires | en |
| dc.type | Article (peer-reviewed) | en |
