Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes

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dc.contributor.authorTanriseven, Selim
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractSize dependent current-voltage measurements were performed on InGaAs quantum dot active region mesa diodes and the surface recombination velocity was extracted from current density versus perimeter/area plots using a diffusion model. An effective surface recombination value of 5.5 x 10(4) cm/s was obtained that can be reduced by more than an order of magnitude by selective oxidation of Al(0.9)Ga(0.1)As cladding layers. The values are three times smaller than those obtained for a single quantum well. The effect of p-type doping in the active region was investigated and found to increase the effective surface recombination. (C) 2011 American Institute of Physics. [doi:10.1063/1.3611387]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid34508
dc.identifier.citationTanriseven, S. and Corbett, B. (2011) 'Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes', Journal of Applied Physics, 110(3), 034508 (5pp). doi: 10.1063/1.3611387en
dc.identifier.doi10.1063/1.3611387
dc.identifier.endpage5
dc.identifier.issn0021-8979
dc.identifier.issued3
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4736
dc.identifier.volume110
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3611387
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Tanriseven, S. and Corbett, B. (2011) 'Low effective surface recombination in In(Ga)As/GaAs quantum dot diodes', Journal of Applied Physics, 110(3), 034508 (5pp). doi: 10.1063/1.3611387 and may be found at http://aip.scitation.org/doi/10.1063/1.3611387en
dc.subjectSurface oxidationen
dc.subjectQuantum dotsen
dc.subjectIII-V semiconductorsen
dc.subjectCurrent densityen
dc.subjectCarrier densityen
dc.titleLow effective surface recombination in In(Ga)As/GaAs quantum dot diodesen
dc.typeArticle (peer-reviewed)en
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