Self-seeded growth of germanium nanowires: coalescence and ostwald ripening

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dc.contributor.authorLotty, Olan
dc.contributor.authorHobbs, Richard
dc.contributor.authorO'Regan, Colm
dc.contributor.authorHlina, Johann
dc.contributor.authorMarschner, Christoph
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-05-22T09:17:22Z
dc.date.available2018-05-22T09:17:22Z
dc.date.issued2012-12-20
dc.date.updated2018-05-16T00:35:29Z
dc.description.abstractWe report the controlled self-seeded growth of highly crystalline Ge nanowires, in the absence of conventional metal seed catalysts, using a variety of oligosilylgermane precursors and mixtures of germane and silane compounds (Ge:Si ratios between 1:4 and 1:1). The nanowires produced were encased in an amorphous shell of material derived from the precursors, which acted to isolate the Ge seed particles from which the nanowires were nucleated. The mode diameter and size distribution of the nanowires were found to increase as the growth temperature and Ge content in the precursors increased. Specifically, a model was developed to describe the main stages of self-seeded Ge nanowire growth (nucleation, coalescence, and Ostwald ripening) from the oligosilylgermane precursors and, in conjunction with TEM analysis, a mechanism of growth was proposed.en
dc.description.sponsorshipIrish Research Council for Science, Engineering and Technology ((IRCSET, EMBARK scholarship)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLotty, O., Hobbs, R., O’Regan, C., Hlina, J., Marschner, C., O’Dwyer, C., Petkov, N. and Holmes, J. D. (2013) 'Self-Seeded Growth of Germanium Nanowires: Coalescence and Ostwald Ripening', Chemistry of Materials, 25(2), pp. 215-222. doi: 10.1021/cm3032863en
dc.identifier.doi10.1021/cm3032863
dc.identifier.endpage222en
dc.identifier.issn0897-4756
dc.identifier.issued2en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage215en
dc.identifier.urihttps://hdl.handle.net/10468/6168
dc.identifier.volume25en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPSen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/08/CE/I1432/IE/CSET CRANN: 2nd Term funding/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET) Supplement/08/CE/I1432s1/IE/CRANN supplement to promote industry engagement/en
dc.relation.urihttps://pubs.acs.org/doi/10.1021/cm3032863
dc.rights© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/cm3032863en
dc.subjectGermaniumen
dc.subjectNanowiresen
dc.subjectSelf-seededen
dc.subjectCoalescenceen
dc.subjectOstwald ripeningen
dc.titleSelf-seeded growth of germanium nanowires: coalescence and ostwald ripeningen
dc.typeArticle (peer-reviewed)en
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