Spatial analysis of failure sites in large area MIM capacitors using wavelets

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dc.check.date2019-04-13
dc.check.infoAccess to this item is restricted until 24 months after publication at the request of the publisher.en
dc.contributor.authorMuñoz-Gorriz, J.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorSuñé, Jordi
dc.contributor.authorHurley, Paul K.
dc.contributor.authorMiranda, Enrique
dc.contributor.funderEuropean Commissionen
dc.contributor.funderHorizon 2020en
dc.contributor.funderDepartament d'Universitats, Recerca i Societat de la Informacióen
dc.contributor.funderGeneralitat de Catalunyaen
dc.date.accessioned2017-05-12T13:39:35Z
dc.date.available2017-05-12T13:39:35Z
dc.date.issued2017-04-13
dc.date.updated2017-05-12T11:55:16Z
dc.description.abstractThe spatial distribution of failure sites in large area (104–105 μm2) metal-insulator-metal (MIM) capacitors with high-K dielectric (HfO2) is investigated using angular wavelets. The failure sites are the consequence of constant or ramped electrical stress applied on the capacitors. Because of the important local thermal effects that take place during stress, the failure sites become visible as a point pattern on the top metal electrode. In case of less damaged devices, the results obtained with the wavelet variance method are consistent with an isotropic distribution of breakdown spots as expected for a Poisson point process (complete spatial randomness). On the contrary, for severely damaged devices, the method shows signs of preferred directions of degradation related to the voltage probe location. In this case, the anisotropy is confirmed by alternative spatial statistics methods such as the angular point-to-event distribution and the pair correlation function.en
dc.description.sponsorshipGeneralitat de Catalunya (DURSI, Grant 2014SGR384)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMuñoz-Gorriz, J., Monaghan, S., Cherkaoui, K., Suñé, J., Hurley, P. K. and Miranda, E. (2017) 'Spatial analysis of failure sites in large area MIM capacitors using wavelets', Microelectronic Engineering, 178, pp. 10-16. doi:10.1016/j.mee.2017.04.011en
dc.identifier.doi10.1016/j.mee.2017.04.011
dc.identifier.endpage16en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage10en
dc.identifier.urihttps://hdl.handle.net/10468/3957
dc.identifier.volume178en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SP1-JTI/621217/EU/PANACHE/PANACHEen
dc.rights© 2017 Published by Elsevier B.V. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectOxide breakdownen
dc.subjectReliabilityen
dc.subjectMIMen
dc.subjectSpatial statisticsen
dc.titleSpatial analysis of failure sites in large area MIM capacitors using waveletsen
dc.typeArticle (peer-reviewed)en
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