Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatment

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dc.contributor.authorO'Connor, Éamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPovey, Ian M.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T10:48:30Z
dc.date.available2017-07-28T10:48:30Z
dc.date.issued2011
dc.description.abstractThe electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)(2)S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation-recombination regime to a diffusion controlled response. (C) 2011 American Institute of Physics. (doi:10.1063/1.3663535)en
dc.description.sponsorshipScience Foundation Ireland (SFI/09/IN.1/I2633)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid212901
dc.identifier.citationO’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901. doi: 10.1063/1.3663535en
dc.identifier.doi10.1063/1.3663535
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued21
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4311
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3663535
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, É., Monaghan, S., Cherkaoui, K., Povey, I. M. and Hurley, P. K. (2011) 'Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment', Applied Physics Letters, 99(21), pp. 212901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3663535en
dc.subjectAluminaen
dc.subjectAtomic layer depositionen
dc.subjectCapacitanceen
dc.subjectDiffusionen
dc.subjectElectrical conductivityen
dc.subjectGallium arsenideen
dc.subjectGolden
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMinority carriersen
dc.subjectMOS capacitorsen
dc.subjectNickelen
dc.subjectOzoneen
dc.titleAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)(2)S treatmenten
dc.typeArticle (peer-reviewed)en
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