Manipulating the growth kinetics of vapor-liquid-solid propagated Ge nanowires

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dc.contributor.authorBiswas, Subhajit
dc.contributor.authorO'Regan, Colm
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMorris, Michael A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2014-01-30T11:52:03Z
dc.date.available2014-08-06T04:00:05Z
dc.date.issued2013-09
dc.date.updated2013-09-12T07:25:30Z
dc.description.abstractThis article describes an innovative approach in which bimetallic alloy seeds of AuxAg1–x are used to enhance the growth kinetics of Ge nanowires, via a vapor–liquid–solid (VLS) growth technique. The decreased equilibrium concentration and increased supersaturation of Ge in the liquid alloy seeds, compared to pure Au seeds, results in favorable growth kinetics and the realization of high-aspect ratio millimeter-long Ge nanowires. Also detailed is the manifestation of the Gibbs-Thompson effect resulting in diameter-dependent nanowire growth rates as a function of the Au–Ag–Ge eutectic composition. Significantly, AuxAg1–x alloy seeds lower the critical diameter of the Ge nanowires in this liquid-seeded growth approach. In situ TEM heating experiments established the correlation between the growth kinetics and equilibrium eutectic compositions in the ternary growth systems. The fundamental insights of nanowire growth demonstrated with the ternary eutectic alloys opens up opportunities to engineer the aspect ratio and morphology of a range of semiconductor nanowires.en
dc.description.sponsorshipScience Foundation Ireland (Grant 09/IN.1/I2602); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBISWAS, S., O’REGAN, C., PETKOV, N., MORRIS, M. A. & HOLMES, J. D. 2013. Manipulating the Growth Kinetics of Vapor–Liquid–Solid Propagated Ge Nanowires. Nano Letters, 13, 4044-4052. 10.1021/nl401250xen
dc.identifier.doi10.1021/nl401250x
dc.identifier.endpage4052en
dc.identifier.issn1530-6984
dc.identifier.issued9en
dc.identifier.journaltitleNano Lettersen
dc.identifier.startpage4044en
dc.identifier.urihttps://hdl.handle.net/10468/1351
dc.identifier.volume13en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.urihttp://pubs.acs.org/doi/abs/10.1021/nl401250x
dc.rights© 2013, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/nl401250xen
dc.subjectGermaniumen
dc.subjectNanowireen
dc.subjectSilveren
dc.subjectGolden
dc.subjectNanoparticleen
dc.subjectSupersaturationen
dc.subjectVapor−liquid−solid growthen
dc.subjectGibbs-Thompson effecten
dc.titleManipulating the growth kinetics of vapor-liquid-solid propagated Ge nanowiresen
dc.typeArticle (peer-reviewed)en
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