GaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

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dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorJin, Shirong
dc.contributor.authorMarko, Igor P.
dc.contributor.authorHild, Konstanze
dc.contributor.authorLudewig, Peter
dc.contributor.authorBushell, Zoe L.
dc.contributor.authorStolz, Wolfgang
dc.contributor.authorRorison, Judy M.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorVolz, Kerstin
dc.contributor.authorSweeney, Stephen J.
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderTechnology Strategy Boarden
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.contributor.funderEuropean Commissionen
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2017-05-04T13:53:18Z
dc.date.available2017-05-04T13:53:18Z
dc.date.issued2017-04-19
dc.date.updated2017-05-04T13:42:25Z
dc.description.abstractThe potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing apThe potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II QWs having long emission wavelengths with little or no net strain relative to GaAs, while also providing control over important laser loss processes. We theoretically and experimentally demonstrate the potential of GaAs1−xBix/GaNyAs1−y type-II QWs on GaAs and show that this approach offers optical emission and absorption at wavelengths up to ~3 µm utilising strain-balanced structures, a first for GaAs-based QWs. Experimental measurements on a prototype GaAs0.967Bi0.033/GaN0.062As0.938 structure, grown via metal-organic vapour phase epitaxy, indicate good structural quality and exhibit both photoluminescence and absorption at room temperature. The measured photoluminescence peak wavelength of 1.72 μm is in good agreement with theoretical calculations and is one of the longest emission wavelengths achieved on GaAs to date using a pseudomorphically grown heterostructure. These results demonstrate the significant potential of this new class of III-V heterostructure for long-wavelength applications.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council, U.K. (EPSRC; project nos EP/K029665/1, EP/H005587/1, and EP/H050787/1); Science Foundation Ireland (SFI; project no. 15/IA/3082); Technology Strategy Board, U.K. (TSB; project no. TP-341 AF045L); Deutsche Forschungsgemeinschaft, German Science Foundation (DFG; project no. GRK 1782, “Functionalization of Semiconductors”); European Commission (project no. FP7-257974, “BIANCHO”)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBroderick, C. A., Jin, S., Marko, I. P., Hild, K., Ludewig, P., Bushell, Z. L., Stolz, W., Rorison, J. M., O’Reilly, E. P., Volz, K. and Sweeney, S. J. (2017) 'GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics', Scientific Reports, 7, pp. 46371. doi: 10.1038/srep46371en
dc.identifier.doi10.1038/srep46371
dc.identifier.endpage46371-9en
dc.identifier.issn2045-2322
dc.identifier.journaltitleScientific Reportsen
dc.identifier.startpage46371-1en
dc.identifier.urihttps://hdl.handle.net/10468/3917
dc.identifier.volume7en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257974/EU/BIsmide And Nitride Components for High temperature Operation/BIANCHOen
dc.rights© The Authors 2017. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectElectronic properties and materialsen
dc.subjectElectronic structureen
dc.subjectSemiconductor lasersen
dc.titleGaAs1-xBix/GaNyAs1-y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonicsen
dc.typeArticle (peer-reviewed)en
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