Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

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dc.contributor.authorConroy, Michele
dc.contributor.authorLi, Haoning
dc.contributor.authorKusch, Gunnar
dc.contributor.authorZhao, Chao
dc.contributor.authorOoi, Boon S.
dc.contributor.authorMartin, Robert W.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commission
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.date.accessioned2016-07-14T08:43:47Z
dc.date.available2016-07-14T08:43:47Z
dc.date.issued2016-06
dc.date.updated2016-07-08T10:51:51Z
dc.description.abstractWe report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.en
dc.description.sponsorshipHigher Education Authority (Programme for Research in Third Level Institutions Cycles 4 and 5 - INSPIRE and TYFFANI projects; INSPIRE PhD research scholarship); Science Foundation Ireland (SFI Grant No. SFI/10/IN.1/I2993; SFI Engineering Professorship scheme 07/EN/E001A); European Commission (European Regional Development Fund); Engineering and Physical Sciences Research Council, United Kingdom (EP/M003132/1)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationConroy, M., Li, H., Kusch, G., Zhao, C., Ooi, B., Martin, R.W., Holmes, J.D. and Parbrook, P.J. (2016) 'Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods', Nanoscale, 8(21), pp. 11019-11026. doi: 10.1039/c6nr00116een
dc.identifier.doi10.1039/c6nr00116e
dc.identifier.endpage11026en
dc.identifier.issn2040-3364
dc.identifier.issued21en
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage11019en
dc.identifier.urihttps://hdl.handle.net/10468/2874
dc.identifier.volume8en
dc.language.isoenen
dc.publisherThe Royal Society of Chemistryen
dc.rights© 2016, the Authors. This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Nanoscale, published by the Royal Society of Chemistry, after peer review. To access the final edited and published work see http://dx.doi.org/10.1039/C6NR00116Een
dc.subjectNitridesen
dc.subjectNanorodsen
dc.subjectSTEMen
dc.subjectEDXen
dc.subjectMOCVDen
dc.subjectInGaNen
dc.titleSite controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rodsen
dc.typeArticle (peer-reviewed)en
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