Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function study

Simple item page
dc.check.date2021-10-29
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorO'Donovan, Michael
dc.contributor.authorLuisier, Mathieu
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorSchulz, Stefan
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2021-01-20T12:49:46Z
dc.date.available2021-01-20T12:49:46Z
dc.date.issued2020-10-29
dc.date.updated2021-01-20T12:07:14Z
dc.description.abstractRecent experimental studies indicate the presence of ballistic hole transport in InGaN multi quantum well (MQW) structures. Widely used drift-diffusion models cannot give insight into this question, since quantum mechanical effects, such as tunneling, are not included in such semi-classical approaches. Also atomistic effects, e.g. carrier localization effects and built-in field variations due to (random) alloy fluctuations, are often neglected in ballistic transport calculations on InGaN quantum well systems. In this work we use atomistic tight-binding theory in conjunction with a non-equilibrium Green's function approach to study electron and hole ballistic transport in InGaN MQW systems. Our results show that for electrons the alloy microstructure is of secondary importance for their ballistic transport properties, while for hole transport the situation is different. We observe for narrow barrier widths in an InGaN MQW system that (random) alloy fluctuations give rise to extra hole transmission channels when compared to a virtual crystal description of the same system. We attribute this effect to the situation that in the random alloy case, k(parallel to)-vector conservation is broken/relaxed and therefore the ballistic hole transport is increased. However, for wider barrier width this effect is strongly reduced, which is consistent with experimental studies. Our findings also provide a possible explanation for recent experimental results where alloying the barrier between the wells leads to enhanced ballistic (hole) transport in InGaN MQW systems.en
dc.description.sponsorshipScience Foundation Ireland (Grants No. 17/CDA/4789, No. 15/IA/3082 and No. 12/RC/2276 P2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid045302en
dc.identifier.citationO'Donovan, M., Luisier, M., O'Reilly, E. P. and Schulz, S. (2021) 'Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function study', Journal of Physics-Condensed Matter, 33, 045302 (16 pp). doi: 10.1088/1361-648X/abbbc6en
dc.identifier.doi10.1088/1361-648X/abbbc6en
dc.identifier.endpage16en
dc.identifier.issn0953-8984
dc.identifier.journaltitleJournal of Physics-Condensed Matteren
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10939
dc.identifier.volume33en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.urihttps://iopscience.iop.org/article/10.1088/1361-648X/abbbc6/meta
dc.rights© 2020 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condensed Matter. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-648X/abbbc6.en
dc.rights.urihttps://creativecommons.org/licences/by-nc-nd/3.0en
dc.subjectElectronic structureen
dc.subjectTransmission characteristicsen
dc.subjectDiodesen
dc.subjectNitrideen
dc.subjectTransporten
dc.subjectNEGFen
dc.titleImpact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green's function studyen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Impact_of_alloy_flucs_on_transprt_Revised1.pdf
Size:
2.5 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles