Rapid, versatile, and reliable metrology for multi-layer transition metal dichalcogenide thin films using atomic force microscopy to investigate surface grain distributions

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dc.contributor.authorTonon, Alessandroen
dc.contributor.authorGupta, Aashien
dc.contributor.authorDi Russo, Enricoen
dc.contributor.authorSheehan, Brendanen
dc.contributor.authorMetaxa, Pavlinaen
dc.contributor.authorArifutzzaman, A.en
dc.contributor.authorConnolly, J.en
dc.contributor.authorLin, Junen
dc.contributor.authorPovey, Ian M.en
dc.contributor.authorSgarbossa, Francescoen
dc.contributor.authorDe Salvador, Davideen
dc.contributor.authorNapolitani, Enricoen
dc.contributor.authorDuffy, Rayen
dc.contributor.funderEuropean Commissionen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2025-09-24T11:51:50Z
dc.date.available2025-09-24T11:51:50Z
dc.date.issued2025-09-23en
dc.description.abstractMolybdenum disulfide (MoS2) has garnered significant attention among 2D materials, demonstrating great potential for electronics and optoelectronics. Although numerous growth techniques have been explored, a definitive solution for large-area film fabrication remains elusive. Moreover, comparing thin-films obtained through different techniques is not straightforward. Particularly, analyzing grain size across samples is challenging, making it difficult to clearly correlate growth conditions with the resulting crystal structure. In this letter, we developed an approach based on atomic force microscopy (AFM) morphology measurements to analyze nanograins in large-area thin-films obtained through relevant growth techniques such as chemical vapor deposition (CVD) and sputter deposition followed by pulsed laser annealing (PLA). To address the challenges in comparing thin-films grown by different methods, we propose a robust approach based on statistical grain analysis. By combining well-established investigation tools, such as AFM, with advanced watershed-segmentation algorithms, we demonstrate a reliable method for identifying grains and grain boundaries. This approach allows for a robust and quantitative comparison of film morphology across different growth conditions, providing a crucial benchmark for evaluating and differentiating various growth methods.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid123102en
dc.identifier.citationTonon, A., Gupta, A., Di Russo, E., Sheehan, B., Metaxa, P., Arifutzzaman, A., Connolly, J., Lin, J., Povey, I., Sgarbossa, F., De Salvador, D., Napolitani, E. and Duffy, R. (2025) ‘Rapid, versatile, and reliable metrology for multi-layer transition metal dichalcogenide thin films using atomic force microscopy to investigate surface grain distributions’, Applied Physics Letters, 127(12), 123102 (8pp). https://doi.org/10.1063/5.0276152en
dc.identifier.doi10.1063/5.0276152en
dc.identifier.eissn1077-3118en
dc.identifier.endpage8en
dc.identifier.issn0003-6951en
dc.identifier.issued12en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/17893
dc.identifier.volume127en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871130/EU/Access to European Infrastructure for Nanoelectronics/ASCENTPlusen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/Frontiers for the Future::Awards/21/FFP-A/9897/IE/Pulsed laser annealing of low temperature 2D semiconductors for large area applications in electronics using flexible substrates/en
dc.rights© 2025, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Tonon, A., Gupta, A., Di Russo, E., Sheehan, B., Metaxa, P., Arifutzzaman, A., Connolly, J., Lin, J., Povey, I., Sgarbossa, F., De Salvador, D., Napolitani, E. and Duffy, R. (2025) ‘Rapid, versatile, and reliable metrology for multi-layer transition metal dichalcogenide thin films using atomic force microscopy to investigate surface grain distributions’, Applied Physics Letters, 127(12), 123102 (8pp). https://doi.org/10.1063/5.0276152 and may be found at https://pubs-aip-org.ucc.idm.oclc.org/aip/apl/article/127/12/123102/3364340/Rapid-versatile-and-reliable-metrology-for-multi.en
dc.subjectSurface grain distributionsen
dc.subjectMolybdenum disulfideen
dc.subjectMoS2en
dc.subject2D materialsen
dc.subjectLarge-area film fabricationen
dc.subjectAtomic force microscopyen
dc.subjectChemical vapor depositionen
dc.titleRapid, versatile, and reliable metrology for multi-layer transition metal dichalcogenide thin films using atomic force microscopy to investigate surface grain distributionsen
dc.typeArticle (peer-reviewed)en
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