Progress on germanium-tin nanoscale alloys

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dc.contributor.authorDoherty, Jessica
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorGalluccio, Emmanuele
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorGarcia-Gil, AdriĆ 
dc.contributor.authorDuffy, Ray
dc.contributor.authorO'Reilly, Eoin
dc.contributor.authorHolmes, Justin D.
dc.date.accessioned2020-05-05T08:38:09Z
dc.date.available2020-05-05T08:38:09Z
dc.date.issued2020-04-24
dc.date.updated2020-05-01T08:55:23Z
dc.description.abstractGroup IV alloys have attracted interest in the drive to create Si compatible, direct bandgap materials for implementation in complementary metal oxide semiconductor (CMOS) and beyond CMOS devices. The lack of a direct bandgap in Si and Ge hinders their incorporation into optoelectronic and photonic devices, without the induction of undesirable strain. Alloying of Ge with Sn represents a novel solution to the lack of light emission in group IV compounds, with an indirect-to-direct bandgap transition predicted for Ge at a Sn incorporation greater than 6.5 at. %. Recently, the initiatives on GeSn alloy research has turned its focus on nanoforms to keep track with the miniaturization of Si-related platforms for application in nano/optoelectronics, photonics and energy devices. Here, we review recent advances in the growth and application of Ge1-xSnx nanomaterials. An overview of theoretical band structure calculations for Ge1-xSnx and the effect of band-mixing is briefly explored to highlight the significance of Sn inclusion in Ge for band gap engineering. Different fabrication methods for growing Ge1-xSnx alloy nanostructures are delineated and corelated with thin films growth. This highlight the requirement of low-temperature, kinetically-driven non-equilibrium processess for growing these metastable nanoscale alloys. The optical and electrical properties for both Ge1-xSnx strain-relaxed one dimensional (1D) nanostructures and nanoparticles are reported with additional highlight on the recent key findings on Ge1-xSnx thin films to indicate the potential application of these materials in photonic, nanoelectronic and optotelectronic devices.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDoherty, J., Biswas, S., Galluccio, E., Broderick, C. A., Garcia-Gil, A., Duffy, R., O'Reilly, E. and Holmes, J. D. (2020) 'Progress on germanium-tin nanoscale alloys', Chemistry of Materials. doi: 10.1021/acs.chemmater.9b04136en
dc.identifier.doi10.1021/acs.chemmater.9b04136en
dc.identifier.eissn1520-5002
dc.identifier.issn0897-4756
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.urihttps://hdl.handle.net/10468/9897
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.rightsĀ© 2020, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials after technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acs.chemmater.9b04136en
dc.subjectPhotonic devicesen
dc.subjectNanoelectronic devicesen
dc.subjectOptotelectronic devicesen
dc.subjectGe1-xSnx thin filmsen
dc.subjectGe1-xSnx strain-relaxed one dimensional (1D) nanostructuresen
dc.subjectNanoparticlesen
dc.titleProgress on germanium-tin nanoscale alloysen
dc.typeArticle (peer-reviewed)en
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