Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting

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dc.check.date2024-07-10
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisher.en
dc.contributor.authorFontana, Daris
dc.contributor.authorSgarbossa, Francesco
dc.contributor.authorMilazzo, Ruggero
dc.contributor.authorDi Russo, Enrico
dc.contributor.authorGalluccio, Emmanuele
dc.contributor.authorDe Salvador, Davide
dc.contributor.authorDuffy, Ray
dc.contributor.authorNapolitani, Enrico
dc.contributor.funderUniversità degli Studi di Padovaen
dc.contributor.funderMinistero dell’Istruzione, dell’Università e della Ricercaen
dc.date.accessioned2022-08-23T11:21:36Z
dc.date.available2022-08-23T11:21:36Z
dc.date.issued2022-07-10
dc.date.updated2022-08-23T11:11:36Z
dc.description.abstractGe1-xSnx alloys have attracted considerable attention for their promising electrical and optical properties. One of the main challenges for their successful implementation in devices concerns the fabrication of n-type heavily doped surface layers. In this work, a new methodology for ex-situ doping of Ge1-xSnx layers is investigated. It consists of the deposition of Sb atoms on the surface of Ge1-xSnx layers followed by pulsed laser melting (PLM) that ensures the diffusion of Sb into the alloy. We demonstrate that Sb is incorporated very efficiently within a relaxed Ge0.91Sn0.09 epilayer, with supersaturated 4 × 1020 cm−3 active concentrations, in line with literature records obtained in Ge1-xSnx with in-situ approaches. At the same time, we observe that the concentration of substitutional Sn close to the surface decreases from 9 to about 6 at. % after PLM, inducing a contraction of the lattice parameter perpendicular to the underlying Ge1-xSnx. These results demonstrate a possible route for ex-situ n-type heavy doping of Ge1-xSnx alloys, but indicate also that Sn redistribution and precipitation phenomena need to be carefully considered for a successful process development.en
dc.description.sponsorshipUniversità degli Studi di Padova (grant UNIPD-ISR 2017 ‘SENSITISE’; project Seal of Excellence@UniPD 2020 “HyperGe”); Ministero dell’Istruzione, dell’Università e della Ricerca (project PRIN 2020 ‘RETINA’ prot. 2020P8WE5S_004)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid154112en
dc.identifier.citationFontana, D., Sgarbossa, F., Milazzo, R., Di Russo, E., Galluccio, E., De Salvador, D., Duffy, R. and Napolitani, E. (2022) 'Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting', Applied Surface Science, 600, 154112 (7pp). doi: 10.1016/j.apsusc.2022.154112en
dc.identifier.doi10.1016/j.apsusc.2022.154112en
dc.identifier.eissn1873-5584
dc.identifier.endpage7en
dc.identifier.issn0169-4332
dc.identifier.journaltitleApplied Surface Scienceen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/13494
dc.identifier.volume600en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.rights© 2022, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectAntimonyen
dc.subjectDopingen
dc.subjectGeen
dc.subjectGeSnen
dc.subjectLaser processingen
dc.subjectPulsed laser meltingen
dc.titleEx-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser meltingen
dc.typeArticle (peer-reviewed)en
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