Broadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dots

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dc.contributor.authorHerzog, B.
dc.contributor.authorLingnau, Benjamin
dc.contributor.authorKolarczik, M.
dc.contributor.authorHelmrich, S.
dc.contributor.authorAchtstein, A. W.
dc.contributor.authorThommes, K.
dc.contributor.authorAlhussein, F.
dc.contributor.authorQuandt, D.
dc.contributor.authorStrittmatter, A.
dc.contributor.authorPohl, U. W.
dc.contributor.authorBrox, O.
dc.contributor.authorWeyers, M.
dc.contributor.authorWoggon, U.
dc.contributor.authorLüdge, Kathy
dc.contributor.authorOwschimikow, N.
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.date.accessioned2019-08-26T14:47:18Z
dc.date.available2019-08-26T14:47:18Z
dc.date.issued2019-05-29
dc.description.abstractIn this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple sheets of InAs in a GaAs matrix, submonolayer quantum dots yield light-emitting devices with large material gain and fast recovery dynamics. Alloying these structures with antimony enhances the carrier localization and red shifts the emission, whereas dramatically broadening the optical bandwidth. In a combined experimental and numerical study, we trace this effect to an Sb-induced bimodal distribution of localized and delocalized exciton states. While the former do not participate in the lasing process, they give rise to a bandwidth broadening at superluminescence operation and optical amplification. Above threshold laser properties like gain and slope efficiency are mainly determined by the delocalized fraction of carriers.en
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (via SFB 787, GRK 1558, and AC 290-2/1)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHerzog, B., Lingnau, B., Kolarczik, M., Helmrich, S., Achtstein, A. W., Thommes, K., Alhussein, F., Quandt, D., Strittmatter, A., Pohl, U. W., Brox, O., Weyers, M., Woggon, U., Lüdge, K. and Owschimikow, N. (2019) 'Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots', IEEE Journal of Selected Topics in Quantum Electronics, 25(6), pp. 1-10. doi: 10.1109/JSTQE.2019.2919763en
dc.identifier.doi10.1109/JSTQE.2019.2919763en
dc.identifier.endpage10en
dc.identifier.issn1077-260X
dc.identifier.issued6en
dc.identifier.journaltitleIEEE Journal of Selected Topics in Quantum Electronicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8393
dc.identifier.volume25en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urihttps://ieeexplore.ieee.org/document/8725534
dc.rights© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectQuantum dotsen
dc.subjectSemiconductor materialsen
dc.subjectSemiconductor lasersen
dc.subjectSemiconductor optical amplifiersen
dc.subjectGallium arsenideen
dc.subjectOptical imagingen
dc.subjectStimulated emissionen
dc.subjectOptical waveguidesen
dc.subjectBiomedical optical imagingen
dc.subjectOptical saturationen
dc.subjectOptical pulsesen
dc.subjectAntimonyen
dc.subjectExcitonsen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectSemiconductor lasersen
dc.subjectSemiconductor quantum dotsen
dc.titleBroadband semiconductor light sources operating at 1060 nm based on InAs:Sb/GaAs submonolayer quantum dotsen
dc.typeArticle (peer-reviewed)en
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