Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

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dc.contributor.authorMena, Josue
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorMartínez, O.
dc.contributor.authorJiménez, J.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.funderConsejería de Educación, Junta de Castilla y Leónen
dc.contributor.funderInstitució Catalana de Recerca i Estudis Avançatsen
dc.contributor.funderMinisterio de Economía y Competitividaden
dc.contributor.funderConsejo Interinstitucional de Ciencia y Tecnologíaen
dc.date.accessioned2017-09-11T13:16:00Z
dc.date.available2017-09-11T13:16:00Z
dc.date.issued2017-08-21
dc.date.updated2017-09-11T11:39:57Z
dc.description.abstractIn this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.en
dc.description.sponsorshipSpanish Government (Projects No. TEC2014-55948-R and MAT2016-75716-C2-1-R (AEI/FEDER, UE) CICYT MAT2010-20441-C02 (01 and 02) and ENE2014-56069-C4-4-R (MINECO)); Catalan Authority (Project No. 2014SGR1358.); Institució Catalana de Recerca i Estudis Avançats (ICREA Academia awards (2010ICREA-02 for excellence in research)); Consejería de Educación, Junta de Castilla y León (under Projects VA293U13 and VA081U16.)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMena, J., Carvajal, J. J., Martínez, O., Jiménez, J., Zubialevich. V. Z., Parbrook, P. J., Diaz, F. and Aguiló, M. (2017)'Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD', Nanotechnology, 28(37) 375701. doi:10.1088/1361-6528/aa7e9den
dc.identifier.doi10.1088/1361-6528/aa7e9d
dc.identifier.endpage375701-9en
dc.identifier.issn0957-4484
dc.identifier.issued37en
dc.identifier.journaltitleNanotechnologyen
dc.identifier.startpage375701-1en
dc.identifier.urihttps://hdl.handle.net/10468/4676
dc.identifier.volume28en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.urihttp://stacks.iop.org/0957-4484/28/i=37/a=375701
dc.rights© 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/aa7e9den
dc.subjectGaNen
dc.subjectPorous materialsen
dc.subjectStructural stressen
dc.subjectOptical characterisationen
dc.titleOptical and structural characterisation of epitaxial nanoporous GaN grown by CVDen
dc.typeArticle (non peer-reviewed)en
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