Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer

dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMurtagh, M. E.
dc.contributor.authorKelly, P. V.
dc.contributor.authorCrean, Gabriel M.
dc.contributor.authorCassette, S.
dc.contributor.authorDelage, S. L.
dc.contributor.authorBland, S. W.
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-12T09:11:18Z
dc.date.available2017-07-12T09:11:18Z
dc.date.issued2002-01
dc.description.abstractDefects in the emitter region of Ga0.51In0.49P/GaAs heterojunction bipolar transistors (HBTs) were investigated by means of deep-level transient spectroscopy. Both annealed (635 degreesC, 5 min) and as grown metalorganic chemical vapor deposition epitaxial wafers were investigated in this study, with an electron trap observed in the HBT emitter space-charge region from both wafers. The deep-level activation energy was determined to be 0.87+/-0.05 eV below the conduction band, the capture cross section 3x10(-14) cm(2) and the defect density of the order of 10(14) cm(-3). This defect was also found to be localized at the emitter-base interface.en
dc.description.sponsorshipEuropean Commission (European Union— HERO’S Project; EU BRITE program (BRPR-CT98-0789))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806.en
dc.identifier.doi10.1063/1.1500417
dc.identifier.endpage2806
dc.identifier.issn0021-8979
dc.identifier.issued5
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage2803
dc.identifier.urihttps://hdl.handle.net/10468/4238
dc.identifier.volume92
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1500417
dc.rights© 2002 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cherkaoui, K., Murtagh, M. E., Kelly, P. V., Crean, G. M., Cassette, S., Delage, S. L. and Bland, S. W. (2002) 'Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer', Journal of Applied Physics, 92(5), pp. 2803-2806 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1500417en
dc.subjectMolecular-beam epitaxyen
dc.subjectVapor-phase epitaxyen
dc.subjectElectron trapsen
dc.subjectGaas baseen
dc.subjectDegradationen
dc.subjectHydrogenen
dc.subjectHeterostructuresen
dc.subjectReliabilityen
dc.subjectIn0.5ga0.5pen
dc.subjectGaInP/GaAsen
dc.subjectHeterojunctionsen
dc.subjectBipolar transistorsen
dc.subjectEpitaxyen
dc.subjectDeep level transient spectroscopyen
dc.subjectEmission spectroscopyen
dc.titleDefect study of GaInP/GaAs based heterojunction bipolar transistor emitter layeren
dc.typeArticle (peer-reviewed)en
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