Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering

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dc.contributor.authorMcSweeney, William
dc.contributor.authorGlynn, Colm
dc.contributor.authorGeaney, Hugh
dc.contributor.authorCollins, Gillian
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderIrish Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2018-02-19T15:48:17Z
dc.date.available2018-02-19T15:48:17Z
dc.date.issued2015-10-01
dc.date.updated2018-02-19T08:59:40Z
dc.description.abstractSi nanowires (NWs) are shown to develop internal mesoporosity during metal assisted chemical etching from Si wafers. The onset of internal porosity in n+-Si(100) compared to p-Si(100) is examined through a systematic investigation of etching parameters (etching time, AgNO3 concentration, HF % and temperature). Electron microscopy and Raman scattering show that specific etching conditions reduce the size of the internal Si nanocrystallites in the internal mesoporous structure to 3–5 nm. Mesoporous NWs are found to have diameters as large as 500 nm, compared to ~100 nm for p-NWs that develop surface roughness. Etching of Si (100) wafers results in (100)-oriented NWs forming a three-fold symmetrical surface texture, without internal NW mesoporosity. The vertical etching rate is shown to depend on carrier concentration and degree of internal mesoporosity formation. Raman scattering of the transverse optical phonon and photoluminescence measurements confirm quantum size effects, phonon scattering and visible intense red light emission between 685 and 720 nm in internally mesoporous NWs associated with the etching conditions. Laser power heating of NWs confirms phonon confinement and scattering, which is demonstrated to be a function of the internal mesoporosity development. We also demonstrate the limitation of mesoporosity formation in n+-Si NWs and development of porosity within p-Si NWs by controlling the etching conditions. Lastly, the data confirm that phonon confinement and scattering often reported for Si NWs is due to surface-bound and internal nanostructure, rather than simply a diameter reduction in NW materials.en
dc.description.sponsorshipHigher Education Authority (Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007–2013); Irish Research Council (Award No. RS/2011/797); Science Foundation Ireland (under the National Access Programme (NAP 417))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationWilliam, M., Colm, G., Hugh, G., Gillian, C., Justin, D. H. and Colm, O. D. (2016) 'Mesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scattering', Semiconductor Science and Technology, 31(1), 014003 (13pp). doi: 10.1088/0268-1242/31/1/014003en
dc.identifier.doi10.1088/0268-1242/31/1/014003
dc.identifier.endpage014003-13en
dc.identifier.issn0268-1242
dc.identifier.journaltitleSemiconductor Science and Technologyen
dc.identifier.startpage014003-1en
dc.identifier.urihttps://hdl.handle.net/10468/5482
dc.identifier.volume31en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/314508/EU/STable high-capacity lithium-Air Batteries with Long cycle life for Electric cars/STABLEen
dc.relation.urihttp://iopscience.iop.org/article/10.1088/0268-1242/31/1/014003/pdf
dc.rights© 2016 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://stacks.iop.org/0268-1242/31/i=1/a=014003.en
dc.subjectPorous semiconductorsen
dc.subjectSiliconen
dc.subjectEtchingen
dc.subjectNanowiresen
dc.subjectRaman scatteringen
dc.titleMesoporosity in doped silicon nanowires from metal assisted chemical etching monitored by phonon scatteringen
dc.typeArticle (peer-reviewed)en
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