Fabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assembly

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dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorGhoshal, Tandra
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorMorris, Michael A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-07-10T10:51:45Z
dc.date.available2018-07-10T10:51:45Z
dc.date.issued2018-06-30
dc.date.updated2018-07-10T10:45:42Z
dc.description.abstractFilms of self assembled diblock copolymers (BCPs) have attracted significant attention for generating semiconductor nanoarrays of sizes below 100 nm through a simple low cost approach for device fabrication. A challenging abstract is controlling microdomain orientation and ordering dictated by complex interplay of surface energies, polymer-solvent interactions and domain spacing. In context, microphase separated poly (styrene-b-ethylene oxide) (PS-b-PEO) thin films is illustrated to fabricate nanopatterns on silicon and germanium materials trenches. The trenched templates was produced by simple electron beam lithography using hydrogen silsesquioxane (HSQ) resist. The orientation of PEO, minority cylinder forming block, was controlled by controlling trench width and varying solvent annealing parameters viz. temperature, time etc. A noticeable difference in microdomain orientation was observed for Si and Ge trenches processed under same conditions. The Ge trenches promoted horizontal orientations compared to Si due to difference in surface properties without any prior surface treatments. This methodology allows to create Ge nanopatterns for device fabrication since native oxides on Ge often induce patterning challenges. Subsequently, a selective metal inclusion method was used to form hardmask nanoarrays to pattern transfer into those substrates through dry etching. The hardmask allows to create good fidelity, low line edge roughness (LER) materials nanopatterns.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGangnaik, A. S., Ghoshal, T., Georgiev, Y. M., Morris, M. A. and Holmes, J. D. (2018) 'Fabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assembly', Journal of Colloid and Interface Science. doi:10.1016/j.jcis.2018.06.018en
dc.identifier.doi10.1016/j.jcis.2018.06.018
dc.identifier.issn0021-9797
dc.identifier.issn1095-7103
dc.identifier.journaltitleJournal of Colloid and Interface Scienceen
dc.identifier.urihttps://hdl.handle.net/10468/6446
dc.language.isoenen
dc.publisherElsevier Inc.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/en
dc.rights© 2018, Elsevier Inc. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectGermaniumen
dc.subjectNanopatternsen
dc.subjectSelf-assemblyen
dc.subjectTrenchen
dc.subjectPattern transferen
dc.titleFabrication of Si and Ge nanoarrays through graphoepitaxial directed hardmask block copolymer self-assemblyen
dc.typeArticle (peer-reviewed)en
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