Theory of reduced built-in polarization field in nitride-based quantum dots

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dc.contributor.authorSchulz, Stefan
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.date.accessioned2021-01-07T11:01:37Z
dc.date.available2021-01-07T11:01:37Z
dc.date.issued2010-07-27
dc.date.updated2021-01-07T10:47:47Z
dc.description.abstractWe use a surface integral method to show that the polarization potential in an InGaN/GaN quantum dot (QD) grown along the [0001] direction is strongly reduced compared to that in a quantum well (QW) of the same height. We use simple analytic expressions and different dot geometries to show that the reduction originates from two effects (i) the reduction in the QD [0001] surface area and (ii) strain redistributions in the QD system. The In composition can therefore be increased in a QD compared to a QW, enabling efficient recombination to longer wavelengths in InGaN QD structures.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid033411en
dc.identifier.citationSchulz, S. and O'Reilly, E. P. (2010) 'Theory of reduced built-in polarization field in nitride-based quantum dots', Physical Review B, 82, 033411 (4pp). doi: 10.1103/PhysRevB.82.033411en
dc.identifier.doi10.1103/PhysRevB.82.033411en
dc.identifier.eissn2469-9969
dc.identifier.endpage4en
dc.identifier.issn1098-0121
dc.identifier.issn2469-9950
dc.identifier.journaltitlePhysical Review Ben
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10867
dc.identifier.volume82en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rights© 2010, American Physical Society. All rights reserved.en
dc.subjectGrowthen
dc.subjectPolarizationen
dc.subjectInGaN/GaNen
dc.subjectQuantum doten
dc.subjectQDen
dc.subjectQuantum wellen
dc.subjectQWen
dc.titleTheory of reduced built-in polarization field in nitride-based quantum dotsen
dc.typeArticle (peer-reviewed)en
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