On-chip investigation of phase noise in monolithically integrated gain-switched lasers

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dc.contributor.authorAlexander, Justin K.
dc.contributor.authorMorrissey, Padraic E.
dc.contributor.authorCaro, Ludovic
dc.contributor.authorDernaika, Mohamad
dc.contributor.authorKelly, Niall P.
dc.contributor.authorPeters, Frank H.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2018-06-14T09:13:19Z
dc.date.available2018-06-14T09:13:19Z
dc.date.issued2017-03-15
dc.date.updated2018-06-13T12:41:13Z
dc.description.abstractPhase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate equations and compared with the experimental results from monolithically integrated devices. The phase noise of a gain-switched laser is modelled both with and without injection-locking using the rate equations for a single-mode laser. Phase noise is found to increase with gain-switching, and decrease when injection-locked to a master laser. This trend is then observed experimentally on-chip with monolithically integrated devices without the use of an isolator.en
dc.description.sponsorshipScience Foundation Ireland (SFI10/CE/I1853 (CTVR))
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAlexander, J. K., Morrissey, P. E., Caro, L., Dernaika, M., Kelly, N. P. and Peters, F. H. (2017) 'On-chip investigation of phase noise in monolithically integrated gain-switched lasers', IEEE Photonics Technology Letters, 29(9), pp. 731-734. doi:10.1109/LPT.2017.2682560en
dc.identifier.doi10.1109/LPT.2017.2682560
dc.identifier.endpage734en
dc.identifier.issn1041-1135
dc.identifier.issued9en
dc.identifier.journaltitleIEEE Photonics Technology Lettersen
dc.identifier.startpage731en
dc.identifier.urihttps://hdl.handle.net/10468/6300
dc.identifier.volume29en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/13/IA/1960/IE/Injection locking within Photonic Integrated Circuits supporting high spectral density optical communications/
dc.rights© 2017, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectIntegrated optoelectronicsen
dc.subjectLaser modesen
dc.subjectLaser noiseen
dc.subjectPhase noiseen
dc.subjectSemiconductor lasersen
dc.subjectMaster laseren
dc.subjectMonolithically integrated gain-switched lasersen
dc.subjectOn-chip investigationen
dc.subjectSemiconductor laser rate equationsen
dc.subjectSingle-mode laseren
dc.subjectLaser theoryen
dc.subjectMathematical modelen
dc.subjectMeasurement by laser beamen
dc.subjectOptical recordingen
dc.subjectNumerical simulationen
dc.subjectOptoelectronic devicesen
dc.titleOn-chip investigation of phase noise in monolithically integrated gain-switched lasersen
dc.typeArticle (peer-reviewed)en
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