Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatments

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dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorPovey, Ian M.
dc.contributor.authorCarolan, Patrick B.
dc.contributor.authorLin, Jun
dc.contributor.authorContreras-Guerrero, Rocio
dc.contributor.authorDroopad, Ravi
dc.contributor.authorHurley, Paul K.
dc.contributor.authorThayne, Iain G.
dc.contributor.funderSemiconductor Research Corporation
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2014
dc.description.abstractIn this work, the impact of ammonium sulfide ((NH4)(2)S) surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al2O3, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH4)(2)S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (D-it) distribution showed a minimum value of 4 x 10(12) cm(-2)eV(-1) at E-v + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al2O3/p-GaSb interface of samples treated with 10% and 22% (NH4)(2)S. In combination, these effects degrade the interface quality as reflected in the CV characteristics. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipSemiconductor Research Corporation (Task ID 1637.002)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid162907
dc.identifier.citationPeralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) 'Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments', Applied Physics Letters, 105(16), pp. 162907. doi: 10.1063/1.4899123en
dc.identifier.doi10.1063/1.4899123
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued16
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4255
dc.identifier.volume105
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4899123
dc.rights© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Peralagu, U., Povey, I. M., Carolan, P., Lin, J., Contreras-Guerrero, R., Droopad, R., Hurley, P. K. and Thayne, I. G. (2014) 'Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments', Applied Physics Letters, 105(16), pp. 162907 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4899123en
dc.subjectCapacitanceen
dc.subjectIII-V semiconductorsen
dc.subjectOzoneen
dc.subjectSurface treatmentsen
dc.subjectGas liquid interfacesen
dc.titleElectrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatmentsen
dc.typeArticle (peer-reviewed)en
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