A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system

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dc.contributor.authorLin, Jun
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPovey, Ian M.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorSheehan, Brendan
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2022-06-28T08:47:03Z
dc.date.available2022-06-28T08:47:03Z
dc.date.issued2015-11-01
dc.date.updated2022-06-27T09:04:20Z
dc.description.abstractIn this work, we performed a study of capacitance–voltage (C–V) hysteresis in HfO2/InGaAs metal-oxide-semiconductor (MOS) systems. The charge trapping density estimated from the C–V hysteresis is comparable to or even greater than the typical interface state density in high-k/InGaAs MOS systems. Based on an oxide thickness series, it is demonstrated that the magnitude of C–V hysteresis increases linearly with the increasing HfO2 thickness, with the corresponding density of trapped charge being a constant value over the range of oxide thicknesses, indicating that the charge trapping is occurring in a plane near/at the HfO2/InGaAs interfacial transition region. C–V hysteresis with a hold in accumulation was also investigated. It is observed that the C–V hysteresis has a power law dependence on the stress time in accumulation at the initial stage of stressing and tends to reach a plateau for sufficiently long stress times. Moreover, a larger gate voltage used during the stress increases the oxide field, allowing more border traps to be accessed.en
dc.description.sponsorshipScience Foundation Ireland (INVENT project (09/IN.1/I2633); Seventh Framework Programme (FP7-ICT-2013-11-619325)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLin, J., Monaghan, S., Cherkaoui, K., Povey, I., O’Connor, É., Sheehan, B. and Hurley, P. (2015) ‘A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system’, Microelectronic Engineering, 147, pp.273-276. doi: 10.1016/j.mee.2015.04.108en
dc.identifier.doi10.1016/j.mee.2015.04.108en
dc.identifier.endpage276en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage273en
dc.identifier.urihttps://hdl.handle.net/10468/13318
dc.identifier.volume147en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.rights© 2015, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectHfO2en
dc.subjectInGaAsen
dc.subjectC–V hysteresisen
dc.subjectStressen
dc.titleA study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor systemen
dc.typeArticle (peer-reviewed)en
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