Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si

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dc.check.date2020-08-23
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisher.en
dc.contributor.authorDinh, Duc V.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderAnvil Semiconductors, United Kingdom
dc.date.accessioned2018-09-24T08:49:27Z
dc.date.available2018-09-24T08:49:27Z
dc.date.issued2018-08-23
dc.date.updated2018-09-14T08:37:48Z
dc.description.abstractHeteroepitaxial growth of GaN buffer layers on 3C-SiC/(001) Si substrates (4°-miscut towards [110]) by metalorganic vapour phase epitaxy has been investigated. High-temperature grown AlxGa1-xN/AlN interlayers were employed to control GaN surface orientations. Semipolar GaN layers with (101¯1), (202¯3) and (101¯2) surface orientations were achieved, as confirmed by X-ray diffraction. Due to the substrate miscut, the growth of (101¯1) layers was twinned along [11¯0]3C-SiC/Si and [1¯10]3C-SiC/Si while the growth of (202¯3) and (101¯2) layers was only along [110]3C-SiC/Si. The (101¯1) layers have rough surface morphology while the (202¯3) and (101¯2) layers have mirror-like smooth surface. For all samples with various surface orientations, different photoluminescence peak emission energies were observed at ∼3.45 eV, 3.78 eV and 3.27 eV at 10 K. These emissions are attributed to the near-band edge of hexagonal GaN, basal-plane stacking faults and partial dislocations, respectively. The dominant luminescence intensity of stacking faults indicates their high density in the GaN layers.en
dc.description.sponsorshipScience Foundation Ireland (Professorship)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDinh, D. V. and Parbrook, P. J. (2018) 'Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si', Journal of Crystal Growth, 501, pp. 34-37. doi:10.1016/j.jcrysgro.2018.08.021en
dc.identifier.doi10.1016/j.jcrysgro.2018.08.021
dc.identifier.endpage37en
dc.identifier.issn0022-0248
dc.identifier.journaltitleJournal of Crystal Growthen
dc.identifier.startpage34en
dc.identifier.urihttps://hdl.handle.net/10468/6867
dc.identifier.volume501en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHTen
dc.rights© 2018, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectMetalorganic vapour phase epitaxyen
dc.subjectNitridesen
dc.subjectGaNen
dc.subjectSemiconducting aluminium compoundsen
dc.titleControl growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Sien
dc.typeArticle (peer-reviewed)en
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