MoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor

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dc.check.date44142
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorDragoman, Mircea
dc.contributor.authorAldrigo, Martino
dc.contributor.authorConnolly, James
dc.contributor.authorPovey, Ian M.
dc.contributor.authorIordanescu, Sergiu
dc.contributor.authorDinescu, Adrian
dc.contributor.authorVasilache, Dan
dc.contributor.authorModreanu, Mircea
dc.contributor.funderMinistry of Research and Innovation, Romaniaen
dc.date.accessioned2019-11-22T09:50:04Z
dc.date.available2019-11-22T09:50:04Z
dc.date.issued43776
dc.date.updated2019-11-22T09:34:20Z
dc.description.abstractIn this paper, we designed, fabricated and tested a microwave circuit based on a MoS2 self-switching diode. The MoS2 thin film (10-monolayers nominal thickness) was grown on a 4 inch Al2O3/high-resistivity silicon wafer by chemical vapor deposition process. The Raman measurements confirm the high quality of the MoS2 over the whole area of the 4 inch wafer. We show experimentally that a microwave circuit based on a few-layers MoS2 self-switching diode fabricated at the wafer level is able to detect the audio spectrum from amplitude-modulated microwave signals in the band 0.9€“10 GHz, i.e. in the frequency range mostly used by current wireless communications. In particular, the 900 MHz band is widely exploited for GSM applications, whereas the 3.6 GHz band has been identified as the primary pioneer band for 5G in the European Union.en
dc.description.sponsorshipMinistry of Research and Innovation, Romania (CNCS UEFISCDI Project No. PN-III-P1€“1.1-PD-2016-0535; Project No. PN-III-P4-ID-PCCF-2016-0033 €˜GRAPHENEFERRO€™)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid06LT01en
dc.identifier.citationDragoman, M., Aldrigo, M., Connolly, J., Povey, I. M., Iordanescu, S., Dinescu, A., Vasilache, D. and Modreanu, M. (2019) 'MoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductor', Nanotechnology, 31(6), 06LT01 (6pp). doi: 10.1088/1361-6528/ab5123en
dc.identifier.doi10.1088/1361-6528/ab5123en
dc.identifier.eissn1361-6528
dc.identifier.endpage6en
dc.identifier.issn0957-4484
dc.identifier.issued6en
dc.identifier.journaltitleNanotechnologyen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9175
dc.identifier.volume31en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rights© 2019, IOP Publishing Ltd. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. After the embargo period, everyone is permitted to use copy and redistribute this article for non-commercial purposes only, provided that they adhere to all the terms of the licence https://creativecommons.org/licences/by-nc-nd/3.0en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectMoS2en
dc.subjectRadioen
dc.subjectHarvestingen
dc.titleMoS2 radio: detecting radio waves with a two-dimensional transition metal dichalcogenide semiconductoren
dc.typeArticle (peer-reviewed)en
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