Calculation of the electron mobility in III-V inversion layers with high-kappa dielectrics

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dc.contributor.authorO'Regan, Terrance P.
dc.contributor.authorFischetti, Massimo V.
dc.contributor.authorSoree, B.
dc.contributor.authorJin, S.
dc.contributor.authorMagnus, W.
dc.contributor.authorMeuris, M.
dc.contributor.funderSemiconductor Research Corporation
dc.contributor.funderMerck Sharp and Dohme
dc.contributor.funderIMEC
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:35Z
dc.date.available2017-09-20T10:06:35Z
dc.date.issued2010
dc.description.abstractWe calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-kappa dielectric layer, and III-V substrate, including scattering with longitudinal-optical (LO) polar-phonons of the III-V substrate and with the interfacial excitations resulting from the coupling of insulator and substrate optical modes among themselves and with substrate plasmons. In treating scattering with the substrate LO-modes, multisubband dynamic screening is included and compared to the dielectric screening in the static limit and with the commonly used screening model obtained by defining an effective screening wave vector. The electron mobility components limited by substrate LO phonons and interfacial modes are calculated for In0.53Ga0.47As and GaAs substrates with SiO2 and HfO2 gate dielectrics. The mobility components limited by the LO-modes and interfacial phonons are also investigated as a function of temperature. Scattering with surface roughness, fixed interface charge, and nonpolar-phonons is also included to judge the relative impact of each scattering mechanism in the total mobility for In0.53Ga0.47As with HfO2 gate dielectric. We show that InGaAs is affected by interfacial-phonon scattering to an extent larger than Si, lowering the expected performance, but probably not enough to question the technological relevance of InGaAs. (C) 2010 American Institute of Physics. [doi:10.1063/1.3500553]en
dc.description.sponsorshipSemiconductor Research Corporation [1373]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid103705
dc.identifier.citationO’Regan, T. P., Fischetti, M. V., Sorée, B., Jin, S., Magnus, W. and Meuris, M. (2010) 'Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics', Journal of Applied Physics, 108(10), 103705 (11pp). doi: 10.1063/1.3500553en
dc.identifier.doi10.1063/1.3500553
dc.identifier.endpage11
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued10
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4742
dc.identifier.volume108
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofInternational Conference on Flexible and Printed Electronics
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/08/US/I1546/IE/Future Oxides and Channel Materials for Ultimate Scaling (FOCUS)/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3500553
dc.rights© 2010, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Regan, T. P., Fischetti, M. V., Sorée, B., Jin, S., Magnus, W. and Meuris, M. (2010) 'Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics', Journal of Applied Physics, 108(10), 103705 (11pp). doi: 10.1063/1.3500553 and may be found at http://aip.scitation.org/doi/10.1063/1.3500553en
dc.subjectDielectricsen
dc.subjectPhononsen
dc.subjectElectron mobilityen
dc.subjectIII-V semiconductorsen
dc.subjectPlasmonsen
dc.titleCalculation of the electron mobility in III-V inversion layers with high-kappa dielectricsen
dc.typeArticle (peer-reviewed)en
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