Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition

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dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorMena, Josue
dc.contributor.authorMartinez, Oscar
dc.contributor.authorJimenez, Juan
dc.contributor.authorGeaney, Hugh
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderConsejería de Educación, Junta de Castilla y Leónen
dc.contributor.funderUniversity College Corken
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderMinisterio de Economía, Industria y Competitividad, Gobierno de Españaen
dc.date.accessioned2018-05-11T15:04:33Z
dc.date.available2018-05-11T15:04:33Z
dc.date.issued2014-09-22
dc.date.updated2018-05-03T10:49:49Z
dc.description.abstractLEDs with enhanced light extraction efficiency and sensors with improved sensitivity have been developed using porous semiconductors. Here, the growth of porous GaN epitaxial layers oriented along the [0001] crystallographic direction on Al2O3, SiC, AlN and GaN substrates is demonstrated. A lattice mismatch between the substrate and the porous GaN layer directly affects the structure and porosity of the porous GaN layer on each substrate. Deposition of unintentionally doped n-type porous GaN on non-porous p-type GaN layers allows for the fabrication of high quality rectifying p–n junctions, with potential applications in high brightness unencapsulated GaN-based light emitting diodes and high surface area wide band gap sensor devices.en
dc.description.sponsorshipMinisterio de Economía, Industria y Competitividad, Gobierno de España (projects no. MAT2011-29255-C02-02, TEC2010-21574-C02-02); Generalitat de Catalunya ((project no. 2009SGR235); fellowship 2013FI-B2 00108); Consejería de Educación, Junta de Castilla y León (project no. VA166A11-2); University College Cork (UCC Strategic Research Fund); Irish Research Council (New Foundations Award 2012);en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBilousov, O. V., Carvajal, J. J., Mena, J., Martinez, O., Jimenez, J., Geaney, H., Diaz, F., Aguilo, M. and O'Dwyer, C. (2014) 'Epitaxial growth of (0001) oriented porous GaN layers by chemical vapour deposition', CrystEngComm, 16(44), pp. 10255-10261. doi: 10.1039/C4CE01339Een
dc.identifier.doi10.1039/C4CE01339E
dc.identifier.endpage10261en
dc.identifier.issn1466-8033
dc.identifier.journaltitleCrystEngCommen
dc.identifier.startpage10255en
dc.identifier.urihttps://hdl.handle.net/10468/6092
dc.identifier.volume16en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACEen
dc.relation.urihttp://pubs.rsc.org/en/content/articlelanding/2014/ce/c4ce01339e#!divAbstract
dc.rights© The Royal Society of Chemistry 2014en
dc.subjectLEDsen
dc.subjectPorous semiconductorsen
dc.subjectLight emitting diodesen
dc.subjectGaN layeren
dc.subjectLight extraction efficiencyen
dc.titleEpitaxial growth of (0001) oriented porous GaN layers by chemical vapour depositionen
dc.typeArticle (peer-reviewed)en
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