Fabrication of p-type porous GaN on silicon and epitaxial GaN

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dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorGeaney, Hugh
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorGiguere, A.
dc.contributor.authorDrouin, Dominique
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSpanish Government
dc.contributor.funderGeneralitat de Catalunya
dc.contributor.funderUniversity College Cork
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-25T14:16:24Z
dc.date.available2017-07-25T14:16:24Z
dc.date.issued2013
dc.description.abstractPorous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC.en
dc.description.sponsorshipSpanish Government (Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02); Generalitat de Catalunya (Catalan Authority (Project No. 2009SGR235)); University College Cork (UCC Strategic Research Fund); Science Foundation Ireland (Award No. 07.SK.B1232a-STTF11); Irish Research Council (New Foundations Award 2012)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid112103
dc.identifier.citationBilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103. doi: 10.1063/1.4821191en
dc.identifier.doi10.1063/1.4821191
dc.identifier.endpage5
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued11
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4267
dc.identifier.volume103
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4821191
dc.rights© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Fabrication of p-type porous GaN on silicon and epitaxial GaN', Applied Physics Letters, 103(11), pp. 112103 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4821191en
dc.subjectChemical-vapor-depositionen
dc.subjectMg-doped gan; yellow luminescenceen
dc.subjectGallium nitrideen
dc.subjectPhotoluminescenceen
dc.subjectParticlesen
dc.subjectNanowiresen
dc.subjectVacanciesen
dc.subjectGrowthen
dc.subjectFilmsen
dc.subjectIII-V semiconductorsen
dc.subjectEpitaxyen
dc.subjectGolden
dc.subjectMagnesiumen
dc.subjectDopingen
dc.titleFabrication of p-type porous GaN on silicon and epitaxial GaNen
dc.typeArticle (peer-reviewed)en
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