Strongly nonparabolic variation of the band gap in InxAl1-xN with low indium content

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dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorDinh, Duc V.
dc.contributor.authorAlam, Shahab N.
dc.contributor.authorSchulz, Stefan
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderMinistry of Science Research and Technologyen
dc.date.accessioned2021-03-09T15:49:27Z
dc.date.available2021-03-09T15:49:27Z
dc.date.issued2015-12-14
dc.date.updated2021-03-05T14:17:54Z
dc.description.abstract80–120 nm thick InxAl1−xN epitaxial layers with 0 < x < 0.224 were grown by metalorganic vapour phase epitaxy on AlN/Al2O3-templates. The composition was varied through control of the growth temperature. The composition dependence of the band gap was estimated from the photoluminescence excitation absorption edge for 0 < x < 0.11 as the material with higher In content showed no luminescence under low excitation. A very rapid decrease in band gap was observed in this range, dropping down below 5.2 eV at x = 0.05, confirming previous theoretical work that used a band-anticrossing model to describe the strongly x-dependent bowing parameter, which in this case exceeds 25 eV in the x → 0 limit. A double absorption edge observed for InAlN with x < 0.01 was attributed to crystal-field splitting of the highest valence band states. Our results indicate also that the ordering of the valence bands is changed at much lower In contents than one would expect from linear interpolation of the valence band parameters. These findings on band gap bowing and valence band ordering are of direct relevance for the design of InAlN-containing optoelectronic devices.en
dc.description.sponsorshipScience Foundation Ireland ((SFI under grant Nos. SFI/10/IN.1/I2993, 10/IN.1/I2994 and 13/SIRG/2210) SFI Engineering Professorship scheme (SFI/07/EN/E001A)); Higher Education Authority (Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects); European Commission ((European Union 7th Framework Programme DEEPEN (grant agreement no. 604416), (European Union 7th Framework Programme ALIGHT project (agreement no. FP7-280587)); Iranian Ministry of Science, Research and Technologyen
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid025006en
dc.identifier.citationZubialevich, V. Z., Dinh, D. V., Alam, S. N., Schulz, S., O’Reilly, E. P. and Parbrook, P. J. (2015) 'Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content', Semiconductor Science and Technology, 31(2), 025006 (11 pp). doi: 10.1088/0268-1242/31/2/025006en
dc.identifier.doi10.1088/0268-1242/31/2/025006en
dc.identifier.eissn1361-6641
dc.identifier.endpage11en
dc.identifier.issn0268-1242
dc.identifier.journaltitleSemiconductor Science and Technologyen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/11126
dc.identifier.volume31en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.urihttps://iopscience.iop.org/article/10.1088/0268-1242/31/2/025006
dc.rights© 2016 IOP Publishing Ltd. This is the Accepted Manuscript version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/0268-1242/31/2/025006en
dc.subjectInAlNen
dc.subjectAlInNen
dc.subjectband gapen
dc.subjectband gap bowing parameteren
dc.subjectphotoluminescence excitationen
dc.titleStrongly nonparabolic variation of the band gap in InxAl1-xN with low indium contenten
dc.typeArticle (peer-reviewed)en
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