Rapid, low temperature synthesis of germanium nanowires from oligosilylgermane precursors

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dc.contributor.authorMeshgi, Mohammad A.
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorMcNulty, David
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorVerni, Giuseppe A.
dc.contributor.authorO'Connell, John
dc.contributor.authorDavitt, Fionán
dc.contributor.authorLetofsky-Papst, Ilse
dc.contributor.authorPoelt, Peter
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMarschner, Christoph
dc.contributor.funderAustrian Science Funden
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2017-07-14T15:28:14Z
dc.date.available2017-07-14T15:28:14Z
dc.date.issued2017-05-08
dc.date.updated2017-07-13T14:01:05Z
dc.description.abstractNew oligosilylgermane compounds with weak Ge–H bonds have been used as precursors for the rapid synthesis of germanium (Ge) nanowires in high yields (>80%), via a solution–liquid–solid (SLS) mechanism, using indium (In) nanoparticles as a seeding agent over a temperature range between 180 and 380 °C. Even at low growth temperatures, milligram quantities of Ge nanowires could be synthesized over a reaction period of between 5 and 10 min. The speed of release of Ge(0) into the reaction environment can be tuned by altering the precursor type, synthesis temperature, and the presence or lack of an oxidizing agent, such as tri-n-octylphosphine oxide (TOPO). Energy-dispersive X-ray analysis showed that silicon atoms from the precursors were not incorporated into the structure of the Ge nanowires. As both In and Ge facilitate reversible alloying with Li, Li-ion battery anodes fabricated with these nanowires cycled efficiently with specific capacities, i.e., >1000 mAh g–1en
dc.description.sponsorshipAustrian Science Fund (Austrian Fonds zur Förderung der wissenschaftlichen Forschung (FWF) via the projects P-22678 and P-26417); Science Foundation Ireland (grant 14/IA/2513).en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationAghazadeh Meshgi, M., Biswas, S., McNulty, D., O’Dwyer, C., Alessio Verni, G., O’Connell, J., Davitt, F., Letofsky-Papst, I., Poelt, P., Holmes, J. D. and Marschner, C. (2017) 'Rapid, Low-Temperature Synthesis of Germanium Nanowires from Oligosilylgermane Precursors', Chemistry of Materials, 29(10), pp. 4351-4360. doi: 10.1021/acs.chemmater.7b00714en
dc.identifier.doi10.1021/acs.chemmater.7b00714
dc.identifier.endpage4360en
dc.identifier.issn0897-4756
dc.identifier.issued10en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage4351en
dc.identifier.urihttps://hdl.handle.net/10468/4243
dc.identifier.volume29en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.rights© 2017 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.chemmater.7b00714en
dc.subjectNanowiresen
dc.subjectGe nanowiresen
dc.subjectGermaniumen
dc.titleRapid, low temperature synthesis of germanium nanowires from oligosilylgermane precursorsen
dc.typeArticle (peer-reviewed)en
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