Monolayer doping of silicon-germanium alloys: a balancing act between phosphorus incorporation and strain relaxation

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dc.contributor.authorKennedy, Noel
dc.contributor.authorDuffy, Ray
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorEaton, Luke
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorHatem, Chris
dc.contributor.authorWalsh, Lee
dc.contributor.authorLong, Brenda
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderEuropean Regional Development Funden
dc.date.accessioned2019-08-26T13:14:35Z
dc.date.available2019-08-26T13:14:35Z
dc.date.issued2019-07-09
dc.date.updated2019-08-26T12:56:34Z
dc.description.abstractThis paper presents the application of monolayer doping (MLD) to silicon-germanium (SiGe). This study was carried out for phosphorus dopants on wafers of epitaxially grown thin films of strained SiGe on silicon with varying concentrations of Ge (18%, 30%, and 60%). The challenge presented here is achieving dopant incorporation while minimizing strain relaxation. The impact of high temperature annealing on the formation of defects due to strain relaxation of these layers was qualitatively monitored by cross-sectional transmission electron microscopy and atomic force microscopy prior to choosing an anneal temperature for the MLD drive-in. Though the bulk SiGe wafers provided are stated to have 18%, 30%, and 60% Ge in the epitaxial SiGe layers, it does not necessarily mean that the surface stoichiometry is the same, and this may impact the reaction conditions. X-ray photoelectron spectroscopy (XPS) and angle-resolved XPS were carried out to compare the bulk and surface stoichiometry of SiGe to allow tailoring of the reaction conditions for chemical functionalization. Finally, dopant profiling was carried out by secondary ion mass spectrometry to determine the impurity concentrations achieved by MLD. It is evident from the results that phosphorus incorporation decreases for increasing mole fraction of Ge, when the rapid thermal annealing temperature is a fixed amount below the melting temperature of each alloy.en
dc.description.sponsorshipEnterprise Ireland (Project Nos. IP-2015-0368 and IP-2017-0605); European Regional Development Fund (ERDF under Ireland’s European Structural and Investment Funds Programmes 2014–2020)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid25103en
dc.identifier.citationKennedy, N., Duffy, R., Mirabelli, G., Eaton, L., Petkov, N., Holmes, J. D., Hatem, C., Walsh, L. and Long, B. (2019) 'Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation', Journal of Applied Physics, 126 (2), 025103 (9 pp). 10.1063/1.5086356en
dc.identifier.doi10.1063/1.5086356en
dc.identifier.endpage9en
dc.identifier.issn0021-8979
dc.identifier.issued2en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8389
dc.identifier.volume126en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/1.5086356
dc.rights© 2019, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 126:2 and may be found at https://aip.scitation.org/doi/abs/10.1063/1.5086356en
dc.subjectSi-Ge alloysen
dc.subjectAtomic force microscopyen
dc.subjectHigh resolution transmission electron microscopyen
dc.subjectMonolayersen
dc.subjectPhosphorusen
dc.subjectRapid thermal annealingen
dc.subjectSecondary ion mass spectrometryen
dc.subjectSemiconductor dopingen
dc.subjectSilicon wafersen
dc.subjectStoichiometryen
dc.subjectStrain relaxationen
dc.subjectX ray photoelectron spectroscopyen
dc.titleMonolayer doping of silicon-germanium alloys: a balancing act between phosphorus incorporation and strain relaxationen
dc.typeArticle (peer-reviewed)en
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