Microtransfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications

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dc.check.date2021-07-06
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorMathews, Ian
dc.contributor.authorQuinn, David
dc.contributor.authorJustice, John
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorLoi, Ruggero
dc.contributor.authorO'Callaghan, James
dc.contributor.authorCorbett, Brian
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-07-29T10:53:15Z
dc.date.available2020-07-29T10:53:15Z
dc.date.issued2020-07-06
dc.date.updated2020-07-29T10:33:26Z
dc.description.abstractHere, the development of high‐efficiency microscale gallium arsenide (GaAs) laser power converters, and their successful transfer printing onto silicon substrates is reported, presenting a unique, high power, low‐cost, and integrated power supply solution for implantable electronics, autonomous systems, and Internet of Things (IoT) applications. 300 µm diameter single‐junction GaAs laser power converters are presented and the transfer printing of these devices to silicon is successfully demonstrated using a polydimethylsiloxane stamp, achieving optical power conversion efficiencies of 49% and 48% under 35 and 71 W cm−2 808 nm laser illumination respectively. The transferred devices are coated with indium tin oxide (ITO) to increase current spreading and are shown to be capable of handling very high short‐circuit current densities up to 70 A cm−2 under 141 W cm−2 illumination intensity (≈1400 Suns), while their open circuit voltage reaches 1235 mV, exceeding the values of pretransfer devices indicating the presence of photon recycling. These optical power sources could deliver Watts of power to sensors and systems in locations where wired power is not an option, while using a massively parallel, scalable, and low‐cost fabrication method for the integration of dissimilar materials and devices.en
dc.description.sponsorshipScience Foundation Ireland (Grant Numbers: 12/RC/2276‐P2; 15/IA/2864)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMathews, I., Quinn, D., Justice, J., Gocalinska, A., Pelucchi, E., Loi, R., O'Callaghan, J. and Corbett, B. (2020) 'Microtransfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications', Advanced Materials Technologies. doi: 10.1002/admt.202000048en
dc.identifier.doi10.1002/admt.202000048en
dc.identifier.eissn2365-709X
dc.identifier.journaltitleAdvanced Materials Technologiesen
dc.identifier.urihttps://hdl.handle.net/10468/10324
dc.language.isoenen
dc.publisherWILEY‐VCH Verlag GmbH & Co.en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-IF-GF/746516/EU/Photon-recycling for high-efficiency energy harvesting in GaAs photovoltaic devices on silicon/RECHARGEen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.rights© 2020, WILEY‐VCH Verlag GmbH & Co. This is the peer reviewed version of the following article: Mathews, I., Quinn, D., Justice, J., Gocalinska, A., Pelucchi, E., Loi, R., O'Callaghan, J. and Corbett, B. (2020) 'Microtransfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications', Advanced Materials Technologies, doi: 10.1002/admt.202000048, which has been published in final form at https://doi.org/10.1002/admt.202000048. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.en
dc.subjectGaAsen
dc.subjectIoTen
dc.subjectPhotovoltaicsen
dc.subjectSensorsen
dc.subjectSiliconen
dc.subjectTransfer printingen
dc.titleMicrotransfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applicationsen
dc.typeArticle (peer-reviewed)en
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