Characterization of a junctionless diode

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dc.contributor.authorYu, Ran
dc.contributor.authorFerain, Isabelle
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorRazavi, Pedram
dc.contributor.authorDuffy, Ray
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:04:39Z
dc.date.available2017-07-28T11:04:39Z
dc.date.issued2011
dc.description.abstractA diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 10(8), an ideality factor of 1.09, and a reverse leakage current of 1 x 10(-14) A at room temperature. The mechanism of the leakage current is discussed using the activation energy (E-A). The turn-on voltage of the device can be tuned by JL transistor threshold voltage. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3608150)en
dc.description.sponsorshipScience Foundation Ireland (05/IN/I888, 09/SIRG/I1623, 10/IN.1/I2992)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid13502
dc.identifier.citationYu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. and Colinge, J.-P. (2011) 'Characterization of a junctionless diode', Applied Physics Letters, 99(1), pp. 013502. doi: 10.1063/1.3608150en
dc.identifier.doi10.1063/1.3608150
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued1
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4318
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257111/EU/Silicon Quantum Wire Transistors/SQWIRE
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257964/EU/ECOSYSTEMS TECHNOLOGY and DESIGN for NANOELECTRONICS/NANO-TEC
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3608150
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Yu, R., Ferain, I., Akhavan, N. D., Razavi, P., Duffy, R. and Colinge, J.-P. (2011) 'Characterization of a junctionless diode', Applied Physics Letters, 99(1), pp. 013502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3608150en
dc.subjectLeakage currentsen
dc.subjectMOSFETsen
dc.subjectP-N junctionsen
dc.subjectCarrier generationen
dc.subjectDiffusionen
dc.titleCharacterization of a junctionless diodeen
dc.typeArticle (peer-reviewed)en
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