Atomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamide

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dc.contributor.authorHagen, Dirk J.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorRushworth, Simon
dc.contributor.authorWrench, Jacqueline S.
dc.contributor.authorKeeney, Lynette
dc.contributor.authorSchmidt, Michael
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorBarry, Seán T.
dc.contributor.authorCoyle, Jason P.
dc.contributor.authorPemble, Martyn E.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderIntel Corporationen
dc.date.accessioned2019-04-03T12:06:58Z
dc.date.available2019-04-03T12:06:58Z
dc.date.issued2014-09-14
dc.date.updated2019-03-26T09:17:56Z
dc.description.abstractThe metal–organic Cu(I) complex 1,3-diisopropyl-imidazolin-2-ylidene copper hexamethyl disilazide has been tested as a novel oxygen-free precursor for atomic layer deposition of Cu with molecular hydrogen. Being a strong Lewis base, the carbene stabilizes the metal centre to form a monomeric compound that can be vaporised and transported without visible degradation. A significant substrate dependence of the growth process not only with respect to the film material but also to the structure of the films was observed. On Pd surfaces continuous films are grown and no phase boundary can be observed between the Cu film and the Pd, while island growth is observed on Ru substrates, which as a consequence requires thicker films in order to achieve a fully coalesced layer. Island growth is also observed for ultra-thin (<10 nm) Pd layers on Si substrates. Possible explanations for the different growth modes observed are discussed.en
dc.description.sponsorshipIrish Research Council for Science, Engineering and Technology (Studentship); Intel Corporation (Intel Ireland)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHagen, D. J., Povey, I. M., Rushworth, S., Wrench, J. S., Keeney, L., Schmidt, M., Petkov, N., Barry, S. T., Coyle, J. P. and Pemble, M. E. (2014) 'Atomic layer deposition of Cu with a carbene-stabilized Cu(i) silylamide', Journal of Materials Chemistry C, 2(43), pp. 9205-9214. doi: 10.1039/C4TC01418Aen
dc.identifier.doi10.1039/C4TC01418Aen
dc.identifier.eissn2050-7534
dc.identifier.endpage9214en
dc.identifier.issn2050-7526
dc.identifier.issued43en
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.startpage9205en
dc.identifier.urihttps://hdl.handle.net/10468/7700
dc.identifier.volume2en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.relation.urihttps://pubs.rsc.org/en/Content/ArticleLanding/2014/TC/C4TC01418A
dc.rights© The Royal Society of Chemistry 2014en
dc.subjectAtomic layer depositionen
dc.subjectMetallic filmsen
dc.subjectDeposition ALDen
dc.titleAtomic layer deposition of Cu with a carbene-stabilized Cu (i) silylamideen
dc.typeArticle (peer-reviewed)en
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