Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

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dc.contributor.authorMurphy, Cónalen
dc.contributor.authorO’Reilly, Eoin P.en
dc.contributor.authorBroderick, Christopher A.en
dc.contributor.funderIrish Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderH2020 Marie Skłodowska-Curie Actionsen
dc.date.accessioned2023-11-01T15:55:14Z
dc.date.available2023-11-01T15:55:14Z
dc.date.issued2023-10-24en
dc.description.abstractWe present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band k.p Hamiltonian to compute the SL electronic structure, paying careful attention to the identification and mitigation of spurious solutions. The calculated SL eigenstates are used directly to compute spontaneous emission spectra and the radiative recombination coefficient B. We elucidate the origin of the relatively large B coefficients in InAs/GaSb SLs which, despite the presence of spatially indirect (type-II-like) carrier confinement, are close to that of bulk InAs and compare favourably to those calculated for mid-infrared type-I pseudomorphic and metamorphic quantum well structures having comparable emission wavelengths. Our analysis explicitly quantifies the roles played by carrier localisation (specifically, partial delocalisation of bound electron states) and miniband formation (specifically, miniband occupation and optical selection rules) in determining the magnitude of $B$ and its temperature dependence. We perform a high-throughput optimisation of the room temperature $B$ coefficient in InAs/GaSb SLs across the 3.5–7 $\mu$m wavelength range, quantifying the dependence of $B$ on the relative thickness of the electron-confining InAs and hole-confining GaSb layers. This analysis provides guidance for the growth of optimised SLs for mid-infrared light emitters. Our results, combined with the expected low non-radiative Auger recombination rates in structures having spatially indirect electron and hole confinement, corroborate recently observed high output power in prototype InAs/GaSb SL inter-band cascade light-emitting diodes.en
dc.description.sponsorshipIrish Research Council (IRC Government of Ireland Postgraduate Scholarship no. GOIPG/2020/1252)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid035103en
dc.identifier.citationMurphy, C., O’Reilly, E.P. and Broderick, C.A. (2024) ‘Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices’, Journal of Physics D: Applied Physics, 57(3), 035103, (15 pp). https://doi.org/10.1088/1361-6463/ad015d.en
dc.identifier.doi10.1088/1361-6463/ad015den
dc.identifier.endpage17en
dc.identifier.issn0022-3727en
dc.identifier.issn1361-6463en
dc.identifier.issued3en
dc.identifier.journaltitleJournal of Physics D: Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/15176
dc.identifier.volume57en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.ispartofJournal of Physics D: Applied Physicsen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres Programme::Phase 2/12/RC/2276_P2/IE/IPIC_Phase 2/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-IF-GF/101030927/EU/Semiconductor crystal phase engineering: new platforms for future photonics/SATORIen
dc.rights© 2023 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectSemiconductorsen
dc.subjectSuperlatticesen
dc.subjectTheory and simulationen
dc.subjectk.p methoden
dc.subjectRecombination ratesen
dc.subjectMid-infrareden
dc.titleTheory and optimisation of radiative recombination in broken-gap InAs/GaSb superlatticesen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue3en
oaire.citation.volume57en
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