Plasmonic Schottky photodetector with metal stripe embedded into semiconductor and with a CMOS-compatible titanium nitride

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dc.contributor.authorGosciniak, Jacek
dc.contributor.authorAtar, Fatih B.
dc.contributor.authorCorbett, Brian
dc.contributor.authorRasras, Mahmoud
dc.date.accessioned2019-11-19T12:05:44Z
dc.date.available2019-11-19T12:05:44Z
dc.date.issued2019-04-15
dc.description.abstractHere we propose an original waveguide-integrated plasmonic Schottky photodetector that takes full advantage of a thin metal stripe embedded entirely into a semiconductor. The photodetector is based on the long-range dielectric-loaded surface plasmon polariton waveguide with a metal stripe deposited on top of a semiconductor rib and covered by another semiconductor. As the metal stripe is entirely surrounded by semiconductor, all hot electrons with appropriate k-vectors can participate in transitions that highly enhances the electron transfer, and consequently the internal quantum efficiency. In addition, a high coupling efficiency from the photonic waveguide to the photodetector is simulated exceeding 90 % which enhances the external quantum efficiency. Calculations show that a responsivity exceeding 0.5 A/W can be achieved at telecom wavelength of 1550 nm and the bandwidth can exceed 100 GHz. Furthermore, it is shown that titanium nitride is a perfect material for the photodetector as it provides a low Fermi energy and long electron mean free path that enhance the hot electron transfer to the semiconductor. In addition, it shows reasonable metallic behavior and CMOS compatibility. Measurements showed that the Schottky barrier height between titanium nitride and p-doped silicon reaches 0.69–0.70 eV that matches the optimum signal-to-noise ratio operation calculated at 0.697 eV.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid6048en
dc.identifier.citationGosciniak, J., Atar, F.B., Corbett, B. and Rasras, M., 2019. Plasmonic Schottky photodetector with metal stripe embedded into semiconductor and with a CMOS-compatible titanium nitride. Scientific reports, 9(1), (6048). DOI:10.1038/s41598-019-42663-3en
dc.identifier.doi10.1038/s41598-019-42663-3en
dc.identifier.eissn2045-2322
dc.identifier.endpage12en
dc.identifier.issued1en
dc.identifier.journaltitleScientific Reportsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9079
dc.identifier.volume9en
dc.language.isoenen
dc.publisherSpringer Natureen
dc.relation.urihttps://www.nature.com/articles/s41598-019-42663-3
dc.rights© The Author(s) 2019en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectPlasmonic Schottky photodetectoren
dc.subjectSemiconductoren
dc.subjectCMOS-compatible titanium nitrideen
dc.titlePlasmonic Schottky photodetector with metal stripe embedded into semiconductor and with a CMOS-compatible titanium nitrideen
dc.typeArticle (peer-reviewed)en
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