Isotropic conduction and negative photoconduction in ultrathin PtSe2 films

Simple item page
dc.contributor.authorUrban, Francesca
dc.contributor.authorGity, Farzan
dc.contributor.authorHurley, Paul K.
dc.contributor.authorMcEvoy, Niall
dc.contributor.authorDi Bartolomeo, Antonio
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderMinistero dell’Istruzione, dell’Università e della Ricercaen
dc.date.accessioned2020-11-09T14:15:40Z
dc.date.available2020-11-09T14:15:40Z
dc.date.issued2020-11-09
dc.date.updated2020-11-09T13:59:31Z
dc.description.abstractPtSe2 ultrathin films are used as the channel of back-gated field-effect transistors that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe2, with p-type conduction, a hole field-effect mobility up to 40 cm2 V−1 s−1, and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe2 channel conductance is observed under exposure to light. Such a negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO2 and at the Si/SiO2 interface.en
dc.description.sponsorshipMinistero dell’Istruzione, dell’Università e della Ricerca (MIUR, Project Nos. Pico & Pro ARS01_01061 and RINASCIMENTO ARS01_01088)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid193102en
dc.identifier.citationUrban, F., Gity, F., Hurley, P. K., McEvoy, N. and Bartolomeo, A. D. (2020) 'Isotropic conduction and negative photoconduction in ultrathin PtSe2 films', Applied Physics Letters, 117(19), 193102 (7 pp). doi: 10.1063/5.0021009en
dc.identifier.doi10.1063/5.0021009en
dc.identifier.endpage7en
dc.identifier.issn0003-6951
dc.identifier.issued19en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10745
dc.identifier.volume117en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/15/SIRG/3329/IE/Synthesis and Characterisation of 2D-Material Heterostacks/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/5.0021009
dc.rights© 2020 Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 117, 193102 (2020) and may be found at https://aip.scitation.org/doi/10.1063/5.0021009en
dc.subjectPtSe2en
dc.subjectUltrathin filmsen
dc.subjectElectronic devicesen
dc.subjectTransistorsen
dc.subjectConductionen
dc.subjectSemiconductor technologyen
dc.subject2D materialen
dc.subject~Tyndall National Institute - Journal Articles~en
dc.titleIsotropic conduction and negative photoconduction in ultrathin PtSe2 filmsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 2 of 2
Thumbnail Image
Name:
APL20-AR-06025.pdf
Size:
1.95 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
Thumbnail Image
Name:
5.0021009.pdf
Size:
2.03 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles