Fully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDs

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dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorMena, Josue
dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorMartínez, Oscar
dc.contributor.authorJiménez, Juan J.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorGeaney, Hugh
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.funderMinisterio de Economía, Industria y Competitividad, Gobierno de Españaen
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderInstitució Catalana de Recerca i Estudis Avançatsen
dc.date.accessioned2018-08-30T15:45:04Z
dc.date.available2018-08-30T15:45:04Z
dc.date.issued2015-05
dc.date.updated2018-05-16T00:54:41Z
dc.description.abstractPorous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.en
dc.description.sponsorshipMinisterio de Economía, Industria y Competitividad, Gobierno de España (Spanish Government under Projects No. MAT2011-29255-C02-02 and MAT2013-47395-C4-4-R); Generalitat de Catalunya (Catalan Government under Project No. 2014SGR1358, and JCYL (VA293U13)); Institució Catalana de Recerca i Estudis Avançats (ICREA Academia Award for Excellence in Research)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCarvajal, J. J., Mena, J., Bilousov, O., Martínez, O., Jiménez, J., Zubialevich, V. Z., Parbrook, P. J., Geaney, H., O'Dwyer, C., Díaz, F. and Aguiló, M. (2015) '(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs', ECS Transactions, 66(1), pp. 163-176. doi: 10.1149/06601.0163ecsten
dc.identifier.doi10.1149/06601.0163ecst
dc.identifier.endpage176en
dc.identifier.issn1938-5862
dc.identifier.issued1en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage163en
dc.identifier.urihttps://hdl.handle.net/10468/6692
dc.identifier.volume66en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.urihttp://ecst.ecsdl.org/content/66/1/163.abstract
dc.rights© 2015 ECS - The Electrochemical Societyen
dc.subjectChemical vapor depositionen
dc.subjectDepositionen
dc.subjectEnergy gapen
dc.subjectGallium nitrideen
dc.subjectLight emitting diodesen
dc.subjectSemiconductor devicesen
dc.subjectSemiconductor junctionsen
dc.subjectSemiconductor materialsen
dc.titleFully porous GaN p-n junctions fabricated by chemical vapor deposition: a green technology towards more efficient LEDsen
dc.typeArticle (peer-reviewed)en
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