In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

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dc.contributor.authorMilojevic, M.
dc.contributor.authorContreras-Guerrero, Rocio
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorBrennan, B.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorKim, J.
dc.contributor.authorHinkle, C. L.
dc.contributor.authorWallace, Robert M.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderNational Science Foundation
dc.contributor.funderNational Institute of Standards and Technology
dc.contributor.funderSemiconductor Research Corporation
dc.date.accessioned2017-07-28T10:48:31Z
dc.date.available2017-07-28T10:48:31Z
dc.date.issued2011
dc.description.abstractGa2O interfacial passivation layers (IPLs) on In0.53Ga0.47As are investigated using in-situ monochromatic x-ray photoelectron spectroscopy. The oxide is entirely composed of Ga2O when deposited with an effusion cell temperature of 1500 degrees C and substrate temperature of 425 degrees C. The growth on In0.53Ga0.47As reveals slight chemical modification of the surface. The Ga2O behavior and ability to protect the III-V surface are observed following Al2O3 deposition by atomic layer deposition following each precursor pulse. Al2O3 growth by trimethyl-Al (TMA) and water reveals that the IPL undergoes the "clean-up" effect following TMA exposures causing As-As bonding formation resulting in a high interface state density. (C) 2011 American Institute of Physics. (doi:10.1063/1.3615666)en
dc.description.sponsorshipSemiconductor Research Corporation (FCRP Materials Structures and Devices (MSD) Center); National Institute of Standards and Technology (through the Midwest Institute for Nanoelectronics Discovery (MIND); National Science Foundation (ECCS Award 0925844); Science Foundation Ireland under Grant Nos. 07/SRC/I1172 and 08/US/I1546)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid42904
dc.identifier.citationMilojevic, M., Contreras-Guerrero, R., O’Connor, E., Brennan, B., Hurley, P. K., Kim, J., Hinkle, C. L. and Wallace, R. M. (2011) 'In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition', Applied Physics Letters, 99(4), pp. 042904. doi: 10.1063/1.3615666en
dc.identifier.doi10.1063/1.3615666
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued4
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4316
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3615666
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Milojevic, M., Contreras-Guerrero, R., O’Connor, E., Brennan, B., Hurley, P. K., Kim, J., Hinkle, C. L. and Wallace, R. M. (2011) 'In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition', Applied Physics Letters, 99(4), pp. 042904 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3615666en
dc.subjectMolecular-beam epitaxyen
dc.subjectGaasen
dc.subjectInterfacesen
dc.subjectGaas(001)-c(2x8)/(2x4)en
dc.subjectSemiconductoren
dc.subjectSubstrateen
dc.subjectOxidationen
dc.subjectImpacten
dc.subjectStatesen
dc.subjectAtomic layer depositionen
dc.subjectOzoneIII-V semiconductorsen
dc.subjectBond formationen
dc.subjectPassivationen
dc.titleIn-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer depositionen
dc.typeArticle (peer-reviewed)en
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