Growth and high frequency characterization of Mn doped sol-gel PbxSr1-xTiO3 for frequency agile applications

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dc.contributor.authorFragkiadakis, C.
dc.contributor.authorLueker, A.
dc.contributor.authorWright, R. V.
dc.contributor.authorFloyd, Liam
dc.contributor.authorKirby, P. B.
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.date.accessioned2017-07-12T09:07:43Z
dc.date.available2017-07-12T09:07:43Z
dc.date.issued2009-03-16
dc.description.abstractIn pursuit of thin film ferroelectric materials for frequency agile applications that are both easily adapted to large area deposition and also high performance, an investigation has been carried out into sol-gel deposition of 3% Mn doped (Pb0.4Sr0.6)TiO3. Large area capability has been demonstrated by growth of films with good crystallinity and grain structure on 4 in. Si wafers. Metal-insulator-metal capacitors have also been fabricated and development of an improved de-embedding technique that takes parasitic impedances fully into account has enabled accurate extraction of the high frequency dielectric properties of the PbxSr1-xTiO3 films. Practically useful values of epsilon similar to 1000, tan delta similar to 0.03, and tunability similar to 50% have been obtained in the low gigahertz range (1-5 GHz). Peaks in the dielectric loss due to acoustic resonance have been modeled and tentatively identified as due to an electrostrictive effect with an electromechanical coupling coefficient of similar to 0.04 at an electric field of 240 kV/cm which is potentially useful for tunable thin film bulk acoustic wave devices.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EPSRC Grant No. EP/C520297/1)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid61635
dc.identifier.citationFragkiadakis, C., Lüker, A., Wright, R. V., Floyd, L. and Kirby, P. B. (2009) 'Growth and high frequency characterization of Mn doped sol-gel PbxSr1−xTiO3 for frequency agile applications', Journal of Applied Physics, 105(6), pp. 061635. doi: 10.1063/1.3078767en
dc.identifier.doi10.1063/1.3078767
dc.identifier.endpage7
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued7
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4216
dc.identifier.volume105
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartof20th International Symposium on Integrated Ferroelectrics
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3078767
dc.rights© 2009 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Fragkiadakis, C., Lüker, A., Wright, R. V., Floyd, L. and Kirby, P. B. (2009) 'Growth and high frequency characterization of Mn doped sol-gel PbxSr1−xTiO3 for frequency agile applications', Journal of Applied Physics, 105(6), pp. 061635. doi: 10.1063/1.3078767 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3078767en
dc.subjectAcoustic resonanceen
dc.subjectAcoustic wavesen
dc.subjectDielectric lossesen
dc.subjectDoping profilesen
dc.subjectElectrostrictionen
dc.subjectFerroelectric capacitorsen
dc.subjectFerroelectric thin filmsen
dc.subjectGrain sizeen
dc.subjectHigh-frequency effectsen
dc.subjectLead compoundsen
dc.subjectManganeseen
dc.subjectMIM structuresen
dc.subjectPermittivityen
dc.subjectPlatinumen
dc.subjectSiliconen
dc.subjectSilicon compoundsen
dc.subjectSol-gel processingen
dc.subjectStrontium compoundsen
dc.subjectTitaniumen
dc.subjectCapacitorsen
dc.subjectElectrodesen
dc.subjectThin film structureen
dc.subjectDielectric thin filmsen
dc.subjectThin film depositionen
dc.titleGrowth and high frequency characterization of Mn doped sol-gel PbxSr1-xTiO3 for frequency agile applicationsen
dc.typeArticle (peer-reviewed)en
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