Ultra-high-density arrays of defect-free AlN nanorods: a "space-filling" approach

Simple item page
dc.contributor.authorConroy, Michele
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorLi, Haoning
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorO'Donoghue, Sally
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-01-26T15:17:44Z
dc.date.available2018-01-26T15:17:44Z
dc.date.issued2015-11-24
dc.date.updated2018-01-26T14:59:03Z
dc.description.abstractNanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or “fill factors”) and a high degree of nonuniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a “space-filling” approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%.en
dc.description.sponsorshipHigher Education Authority ((Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects), (Irish Government’s Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007−2013, with the assistance of the European Regional Development Fund))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationConroy, M., Zubialevich, V. Z., Li, H., Petkov, N., O’Donoghue, S., Holmes, J. D. and Parbrook, P. J. (2016) 'Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach', ACS Nano, 10(2), pp. 1988-1994. doi:10.1021/acsnano.5b06062en
dc.identifier.doi10.1021/acsnano.5b06062
dc.identifier.endpage1994en
dc.identifier.issn1936-0851
dc.identifier.issued2en
dc.identifier.journaltitleACS Nanoen
dc.identifier.startpage1988en
dc.identifier.urihttps://hdl.handle.net/10468/5334
dc.identifier.volume10en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I2993/IE/Advanced Ultraviolet Emitters from InAlN Based Alloy Structures/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/EN/E001A/IE/Peter Parbrook/en
dc.rights© 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b06062en
dc.subjectAluminum nitrideen
dc.subjectGrowth mechanismen
dc.subjectIII-nitridesen
dc.subjectNanorodsen
dc.subjectNanowiresen
dc.titleUltra-high-density arrays of defect-free AlN nanorods: a "space-filling" approachen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Ultra_High_Density_Arrays_of_Defect_Free_AlN_Nanorods_A_Space_Filling_Approach_ACS_nano_30-10-15.pdf
Size:
1.39 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Chemistry - Journal Articles
Tyndall National Institute - Journal Articles