Parallel arrays of sub-10 nm aligned germanium nanofins from an in-situ metal oxide hardmask using directed self-assembly of block copolymers

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dc.contributor.authorCummins, Cian
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorKelly, Róisín A.
dc.contributor.authorHydes, Alan J.
dc.contributor.authorO'Connell, John
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorBorah, Dipu
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.date.accessioned2018-09-14T14:25:10Z
dc.date.available2018-09-14T14:25:10Z
dc.date.issued2015-08-11
dc.date.updated2018-08-08T10:22:42Z
dc.description.abstractHigh-mobility materials and non-traditional device architectures are of key interest in the semiconductor industry because of the need to achieve higher computing speed and low power consumption. In this article, we present an integrated approach using directed self-assembly (DSA) of block copolymers (BCPs) to form aligned line-space features through graphoepitaxy on germanium on insulator (GeOI) substrates. Ge is an example of a high mobility material (III–V, II–VI) where the chemical activity of the surface and its composition sensitivity to etch processing offers considerable challenges in fabrication compared to silicon (Si). We believe the methods described here afford an opportunity to develop ultrasmall dimension patterns from these important high-mobility materials. High-quality metal oxide enhanced pattern transfer to Ge is demonstrated for the realization of nanofins with sub-10 nm feature size. Graphoepitaxial alignment of a poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP was achieved using predefined hydrogen silsesquioxane (HSQ) topography at a GeOI substrate. Subsequent impregnation of the aligned BCP templates with a salt precursor in situ and simple processing was used to generate robust metal oxide nanowire (e.g., Fe3O4, γ-Al2O3, and HfO2) hardmask arrays. Optimized plasma based dry etching of the oxide modified substrate allowed the formation of high aspect ratio Ge nanofin features within the HSQ topographical structure. We believe the methodology developed has significant potential for high-resolution device patterning of high mobility semiconductors. We envision that the aligned Ge nanofin arrays prepared here via graphoepitaxy might have application as a replacement channel material for complementary metal–oxide–semiconductor (CMOS) devices and integrated circuit (IC) technology. Furthermore, the low capital required to produce Ge nanostructures with DSA technology may be an attractive route to address technological and economic challenges facing the nanoelectronic and semiconductor industry.en
dc.description.sponsorshipScience Foundation Ireland ((SFI Grant 09/IN.1/602) AMBER SFI Centre (Grant 12/ RC/2278)); Semiconductor Research Corporation (GRC Task 2444.001)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCummins, C., Gangnaik, A., Kelly, R. A., Hydes, A. J., O’Connell, J., Petkov, N., Georgiev, Y. M., Borah, D., Holmes, J. D. and Morris, M. A. (2015) 'Parallel Arrays of Sub-10 nm Aligned Germanium Nanofins from an In Situ Metal Oxide Hardmask using Directed Self-Assembly of Block Copolymers', Chemistry of Materials, 27(17), pp. 6091-6096. doi:10.1021/acs.chemmater.5b02608en
dc.identifier.doi10.1021/acs.chemmater.5b02608
dc.identifier.endpage6096en
dc.identifier.issn0897-4756
dc.identifier.issued17en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage6091en
dc.identifier.urihttps://hdl.handle.net/10468/6792
dc.identifier.volume27en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.urihttps://pubs.acs.org/doi/10.1021/acs.chemmater.5b02608
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.chemmater.5b02608en
dc.subjectIn situ processingen
dc.subjectAspect ratioen
dc.subjectBlock copolymersen
dc.subjectElectron beam lithographyen
dc.subjectField effect transistorsen
dc.subjectGermaniumen
dc.subjectImpregnationen
dc.subjectMetallic compoundsen
dc.subjectMetalsen
dc.subjectMOS devicesen
dc.subjectSelf assemblyen
dc.subjectSemiconducting germaniumen
dc.subjectSemiconductor device manufactureen
dc.subjectSemiconductor devicesen
dc.subjectStyreneen
dc.subjectSubstratesen
dc.titleParallel arrays of sub-10 nm aligned germanium nanofins from an in-situ metal oxide hardmask using directed self-assembly of block copolymersen
dc.typeArticle (peer-reviewed)en
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