Defect-tuned conduction in ultrathin MoTe2 field-effect transistors

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dc.contributor.authorMazzotti, A.
dc.contributor.authorIntonti, K.
dc.contributor.authorSessa, A.
dc.contributor.authorViscardi, L.
dc.contributor.authorDurante, O.
dc.contributor.authorPelella, A.
dc.contributor.authorO’Sullivan, S.
dc.contributor.authorPatil, V.
dc.contributor.authorHurley, P.K.
dc.contributor.authorAnsari, L.
dc.contributor.authorGity, F.
dc.contributor.authorDi Bartolomeo, A.
dc.contributor.funderUniversity of Salerno, ORSA254881
dc.contributor.funderTaighde Éireann - Research Ireland, SFI-12/RC/2278_P2-24/FFP-A/13329
dc.contributor.funderEU Framework 6 Marie Curie Programme, 101153933
dc.contributor.funderUniversità degli Studi di Salerno, UNISA, ORSA254881
dc.contributor.funderAdvanced Materials and Bioengineering Research, AMBER, SFI-12/RC/2278_P2-24/FFP-A/13329
dc.date.accessioned2026-04-28T14:50:10Z
dc.date.available2026-04-28T14:50:10Z
dc.date.issued2026-04-09
dc.description.abstractIn atomically thin electronics, interfaces and interfacial defects play a critical role in determining device performance. Herein, interfaces with metal contacts, gate dielectrics, and ambient environments are systematically investigated in p-type field-effect transistors with an ultrathin MoTe 2 channel, through temperature- and pressure-dependent measurements, supported by density functional theory calculations. The device performance, likely influenced by Te and Mo vacancies, is enhanced under reduced pressure. Low and nearly symmetric Schottky barrier heights around 37 ± 3 meV are extracted at the metal/semiconductor interfaces through temperature-dependent measurements. The temperature dependence of the mobility suggests that ionized-impurity scattering is possibly associated with Te and Mo vacancies, as a relevant transport mechanism below 300 K, while acoustic-phonon scattering prevails at higher temperatures. Both the subthreshold swing and threshold voltage increase exponentially with temperature, consistent with thermally activated transport mechanisms from band-tail states. A stepwise increase in pressure, starting from vacuum and gradually introducing ambient air, leads to reduced mobility and conductance, which is consistent with progressive molecular physisorption that introduces additional scattering. Near atmospheric pressure, adsorbates are likely to contribute significantly to p-type doping. Taken together, these results elucidate how vacancies, interface traps, and surface adsorbates may govern charge transport in MoTe 2 and provide quantitative guidelines for defect and interface engineering that may also be relevant to other two-dimensional semiconductor devices.en
dc.description.sponsorshipA. D. B. acknowledges the financial support from the University of Salerno, with grant ORSA254881. This work was also supported by Research Ireland (formerly Science Foundation Ireland) through the AMBER Research Centre (SFI-12/RC/2278_P2) and the Frontiers for the Future PI Award (24/FFP-A/13329). Support from the EU MSCA project 101153933 is also acknowledged. The authors acknowledge the SFI/HEA Irish Centre for High-End Computing (ICHEC) for the provision of computational facilities and support. The authors also acknowledge K. Momma and F. Izumi for the software support.115
dc.description.versionPublished Version
dc.format.extent15
dc.format.mimetypeapplication/pdfen
dc.identifier.authororcidMazzotti, A.
dc.identifier.authororcidIntonti, K.
dc.identifier.authororcidSessa, A.
dc.identifier.authororcidViscardi, L.
dc.identifier.authororcidDurante, O.
dc.identifier.authororcidPelella, A.
dc.identifier.authororcidO’Sullivan, S.
dc.identifier.authororcidPatil, V.
dc.identifier.authororcidHurley, P.K.
dc.identifier.authororcidAnsari, L.§0000-0002-9284-2832
dc.identifier.authororcidGity, F.
dc.identifier.authororcidDi Bartolomeo, A.
dc.identifier.citationMazzotti, A, Intonti, K, Sessa, A, Viscardi, L, Durante, O, Pelella, A, O’Sullivan, S, Patil, V, Hurley, P K, Ansari, L, Gity, F & Di Bartolomeo, A 2026, 'Defect-tuned conduction in ultrathin MoTe2 field-effect transistors', Journal of Materials Chemistry C, vol. 14, no. 22, pp. 9773-9787. https://doi.org/10.1039/d6tc00385k
dc.identifier.doi10.1039/d6tc00385k
dc.identifier.endpage9787
dc.identifier.issn2050-7526
dc.identifier.issued22
dc.identifier.journaltitleJournal of Materials Chemistry C
dc.identifier.otherRIS: urn:3F20C191CE45DCCDACAB6087D81D30DB
dc.identifier.otherORCID: /0000-0002-9284-2832/work/213164622
dc.identifier.startpage9773
dc.identifier.urihttps://hdl.handle.net/10468/18704
dc.identifier.volume14
dc.language.isoen
dc.publisherRoyal Society of Chemistry
dc.relation.urihttps://www.scopus.com/pages/publications/105036397315
dc.relation.urihttps://www.scopus.com/pages/publications/105036397315?origin=resultslist
dc.rightsPublisher Copyright: This journal is © The Royal Society of Chemistry, 2026.
dc.rights.accessrightsopen access
dc.rights.licensenameAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.statusPeer reviewed
dc.subjectAdsorbates
dc.subjectAmbient environment
dc.subjectAtmospheric movements
dc.subjectAtmospheric pressure
dc.subjectContacts (fluid mechanics)
dc.subjectDensity functional theory
dc.subjectDevice performance
dc.subjectElectronic defects
dc.subjectElectronic interface
dc.subjectField effect transistors
dc.subjectField-effect transistor
dc.subjectGate dielectrics
dc.subjectInterface defects
dc.subjectInterfacial defect
dc.subjectMetal contacts
dc.subjectMolybdenum compounds
dc.subjectSemiconductor doping
dc.subjectSemiconductor metal boundaries
dc.subjectSurface defects
dc.subjectSurface scattering
dc.subjectTellurium compounds
dc.subjectThreshold voltage
dc.subjectTransport mechanism
dc.subjectUltra-thin
dc.subject[Tyndall]
dc.titleDefect-tuned conduction in ultrathin MoTe2 field-effect transistorsen
dc.typeArticle (peer-reviewed)
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