Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature

Simple item page
dc.contributor.authorKampylafka, V.
dc.contributor.authorKostopoulos, A.
dc.contributor.authorModreanu, Mircea
dc.contributor.authorSchmidt, Michael
dc.contributor.authorGagaoudakis, E.
dc.contributor.authorTsagaraki, K.
dc.contributor.authorKontomitrou, V.
dc.contributor.authorKonstantinidis, G.
dc.contributor.authorDeligeorgis, George
dc.contributor.authorKiriakidis, G.
dc.contributor.authorAperathitis, E.
dc.contributor.funderHorizon 2020en
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderErasmus+en
dc.date.accessioned2019-03-04T12:47:03Z
dc.date.available2019-03-04T12:47:03Z
dc.date.issued2019
dc.date.updated2019-03-04T12:37:08Z
dc.description.abstractZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates. A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth chamber. The nitrogen-containing films (less than 1.5 at.% of nitrogen) were n-type ZnO when deposited in oxygen-deficient Ar plasma (10% O2) and p-type ZnO when deposited in oxygen-rich Ar plasma (50% O2). The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75–85%. The n/p ZnO homojunctions, having metallic contacts, formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage characteristics. However, the same homojunctions formed on Si3N4-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 V. The realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices.en
dc.description.sponsorshipEuropean Regional Development Fund (“Materials and Processes for Energy and Environment Applications-AENAO”(MIS 5002556) project co-financed by Greece and EU(European Regional Development Fund)); Erasmus + (“Electronics Beyond Silicon Era”(ELBESIER) Erasmus+ ΚА2programme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKampylafka, V., Kostopoulos, A., Modreanu, M., Schmidt, M., Gagaoudakis, E., Tsagaraki, K., Kontomitrou, V., Konstantinidis, G., Deligeorgis, G., Kiriakidis, G. and Aperathitis, E. (2019) 'Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature', Journal of Materiomics, In Press, doi: 10.1016/j.jmat.2019.02.006en
dc.identifier.doi10.1016/j.jmat.2019.02.006
dc.identifier.endpage24en
dc.identifier.issn2352-8478
dc.identifier.journaltitleJournal Of Materiomicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7561
dc.language.isoenen
dc.publisherElsevieren
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/246334/EU/Oxide Materials Towards a Matured Post-silicon Electronics Era/ORAMAen
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S2352847818301898
dc.rights© 2019. The Chinese Ceramic Society. Production and hosting by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectZnO homojunctionen
dc.subjectp-type ZnOen
dc.subjectSingle step sputteringen
dc.subjectStabilityen
dc.subjectPatterned substrateen
dc.titleLong-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperatureen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
9354_2019_JMat_pnZnO.pdf
Size:
3.81 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles