Wide spectral photoresponse of layered platinum diselenide-based photodiodes

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dc.contributor.authorYim, Chanyoung
dc.contributor.authorMcEvoy, Niall
dc.contributor.authorRiazimehr, Sarah
dc.contributor.authorSchneider, Daniel S.
dc.contributor.authorGity, Farzan
dc.contributor.authorMonaghan, Scott
dc.contributor.authorHurley, Paul K.
dc.contributor.authorLemme, Max C.
dc.contributor.authorDuesberg, Georg S.
dc.contributor.funderDeutsche Forschungsgemeinschaft
dc.contributor.funderEuropean Regional Development Fund
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEuropean Commission
dc.contributor.funderEuropean Research Council
dc.date.accessioned2018-09-24T12:36:57Z
dc.date.available2018-09-24T12:36:57Z
dc.date.issued2018
dc.description.abstractPlatinum diselenide (PtSe2) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe2 thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe2 films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO2/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1–1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe2 in infrared allows PtSe2 to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe2 is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions.en
dc.description.sponsorshipEuropean Regional Development Fund (HEA2D, EFRE0800149); Deutsche Forschungsgemeinschaft (DFG LE2440/1-2, GRK 1564)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationYim, C., McEvoy, N., Riazimehr, S., Schneider, D. S., Gity, F., Monaghan, S., Hurley, P. K., Lemme, M. C. and Duesberg, G. S. (2018) 'Wide spectral photoresponse of layered platinum diselenide-based photodiodes', Nano Letters, 18(3), pp. 1794-1800. doi: 10.1021/acs.nanolett.7b05000en
dc.identifier.doi10.1021/acs.nanolett.7b05000
dc.identifier.endpage1800
dc.identifier.issn1530-6984
dc.identifier.issued3
dc.identifier.journaltitleNano Lettersen
dc.identifier.startpage1794
dc.identifier.urihttps://hdl.handle.net/10468/6874
dc.identifier.volume18
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/15/SIRG/3329/IE/Synthesis and Characterisation of 2D-Material Heterostacks/
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::SGA-RIA/696656/EU/Graphene-based disruptive technologies/GrapheneCore1
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP2::ERC/307311/EU/Integrating Graphene Devices/INTEGRADE
dc.relation.urihttps://pubs.acs.org/doi/10.1021/acs.nanolett.7b05000
dc.rights© 2018, American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposesen
dc.rights.urihttps://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.subjectTwo-dimensional transition metal dichalcogenideen
dc.subjectPlatinum diselenideen
dc.subjectSchottky barrier diodeen
dc.subjectPhotodetectoren
dc.subjectSpectral responseen
dc.subjectIr photodiodeen
dc.titleWide spectral photoresponse of layered platinum diselenide-based photodiodesen
dc.typeArticle (peer-reviewed)en
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