Advancing atomic nanolithography: cold atomic Cs beam exposure of alkanethiol self-assembled monolayers

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dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorGay, G.
dc.contributor.authorViaris de Lesegno, B.
dc.contributor.authorWeiner, J.
dc.contributor.authorMutzel, M.
dc.contributor.authorHaubrich, D.
dc.contributor.authorMeschede, D.
dc.contributor.authorLudolph, K.
dc.contributor.authorGeorgiev, G.
dc.contributor.authorOesterschulze, E.
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2016-07-05T14:43:48Z
dc.date.available2016-07-05T14:43:48Z
dc.date.issued2005-01
dc.date.updated2012-11-30T11:06:15Z
dc.description.abstractWe report the results of a study into the quality of functionalized surfaces for nanolithographic imaging. Self-assembled monolayer (SAM) coverage, subsequent post-etch pattern definition and minimum feature size all depend on the quality of the Au substrate used in atomic nanolithographic experiments. We find sputtered Au substrates yield much smoother surfaces and a higher density of {111} oriented grains than evaporated Au surfaces. A detailed study of the self-assembly mechanism using molecular resolution AFM and STM has shown that the monolayer is composed of domains with sizes typically of 5-25 nm, and multiple molecular domains can exist within one Au grain. Exposure of the SAM to an optically-cooled atomic Cs beam traversing a two-dimensional array of submicron material masks ans also standing wave optical masks allowed determination of the minimum average Cs dose (2 Cs atoms per SAM molecule) and the realization of < 50 nm structures. The SAM monolayer contains many non-uniformities such as pin-holes, domain boundaries and monoatomic depressions which are present in the Au surface prior to SAM adsorption. These imperfections limit the use of alkanethiols as a resist in atomic nanolithography experiments. These studies have allowed us to realize an Atom Pencil suitable for deposition of precision quantities of material at the microand nanoscale to an active surface.en
dc.description.sponsorshipEuropean Commission (European Community’s Human Potential Programme under contract HPRN-CT-2002-00304.)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C., Gay, G., Lesegno, B., Viaris de,Weiner, J., Mutzel, M., Haubrich, D., Meschede, D., udolph, K., Georgiev, G. and Oesterschulze, E. (2005) 'Advancing atomic nanolithography: cold atomic Cs beam exposure of alkanethiol self-Assembled monolayers', Journal of Physics: Conference Series, 19, pp. 109-117. http://stacks.iop.org/1742-6596/19/i=1/a=019en
dc.identifier.doi10.1088/1742-6596/19/1/019
dc.identifier.endpage117en
dc.identifier.issn1742-6588
dc.identifier.issn1742-6596
dc.identifier.journaltitleJournal of Physics: Conference Seriesen
dc.identifier.startpage109en
dc.identifier.urihttps://hdl.handle.net/10468/2825
dc.identifier.volume19en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rights© 2005 IOP Publishing Ltd.en
dc.subjectFunctionalized surfacesen
dc.subjectNanolithographic imagingen
dc.subjectNanolithograpyen
dc.subjectSelf-assembled monolayeren
dc.subjectAtom pencilen
dc.titleAdvancing atomic nanolithography: cold atomic Cs beam exposure of alkanethiol self-assembled monolayersen
dc.typeArticle (peer-reviewed)en
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