Influence of Si-N complexes on the electronic properties of GaAsN alloys

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dc.contributor.authorJin, Y.
dc.contributor.authorHe, Y.
dc.contributor.authorCheng, H.
dc.contributor.authorJock, R. M.
dc.contributor.authorDannecker, Tassilo
dc.contributor.authorReason, M.
dc.contributor.authorMintairov, A. M.
dc.contributor.authorKurdak, C.
dc.contributor.authorMerz, J. L.
dc.contributor.authorGoldman, R. S.
dc.contributor.funderNational Science Foundation
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:22:10Z
dc.date.available2017-07-28T11:22:10Z
dc.date.issued2009
dc.description.abstractWe have investigated the influence of Si-N complexes on the electronic properties of GaAsN alloys. The presence of Si-N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN: Si films but not in modulation-doped heterostructures. In addition, for GaAsN: Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si-N complex formation and a reduced concentration of N-related traps. Since Si-N complex formation is enhanced for GaAsN: Si growth with the (2x4) reconstruction, which has limited group V sites for As-N exchange, the (Si-N)(As) interstitial pair is identified as the dominant Si-N complex. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3198207)en
dc.description.sponsorshipNational Science Foundation (Grant No. DMR 0606406)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid92109
dc.identifier.citationJin, Y., He, Y., Cheng, H., Jock, R. M., Dannecker, T., Reason, M., Mintairov, A. M., Kurdak, C., Merz, J. L. and Goldman, R. S. (2009) 'Influence of Si–N complexes on the electronic properties of GaAsN alloys', Applied Physics Letters, 95(9), pp. 092109.en
dc.identifier.doi10.1063/1.3198207
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4354
dc.identifier.volume95
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3198207
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Jin, Y., He, Y., Cheng, H., Jock, R. M., Dannecker, T., Reason, M., Mintairov, A. M., Kurdak, C., Merz, J. L. and Goldman, R. S. (2009) 'Influence of Si–N complexes on the electronic properties of GaAsN alloys', Applied Physics Letters, 95(9), pp. 092109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3198207en
dc.subjectMolecular-beam epitaxyen
dc.subjectLuminescence efficiencyen
dc.subjectNitrogenen
dc.subjectArsenidesen
dc.subjectGa(as,n)en
dc.subjectGrowthen
dc.subjectLayersen
dc.subjectIII-V semiconductorsen
dc.subjectAnnealingen
dc.subjectDopingen
dc.subjectThin film growthen
dc.subjectThin filmsen
dc.titleInfluence of Si-N complexes on the electronic properties of GaAsN alloysen
dc.typeArticle (peer-reviewed)en
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