Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

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dc.contributor.authorBuitrago, Elizabeth
dc.contributor.authorBadia, Monserrat Fernández-Bolaños
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorYu, Ran
dc.contributor.authorLotty, Olan
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorNightingale, Adrian M.
dc.contributor.authorGuerin, Höel M.
dc.contributor.authorIonescu, Adrian M.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2016-02-10T17:39:04Z
dc.date.available2016-02-10T17:39:04Z
dc.date.issued2014-04-03
dc.date.updated2014-10-21T11:13:45Z
dc.description.abstractA 3D vertically stacked silicon nanowire (SiNW) field effect transistor featuring a high density array of fully depleted channels gated by a backgate and one or two symmetrical platinum side-gates through a liquid has been electrically characterized for their implementation into a robust biosensing system. The structures have also been characterized electrically under vacuum when completely surrounded by a thick oxide layer. When fully suspended, the SiNWs may be surrounded by a conformal high-κ gate dielectric (HfO2) or silicon dioxide. The high density array of nanowires (up to 7 or 8 × 20 SiNWs in the vertical and horizontal direction, respectively) provides for high drive currents (1.3 mA/μm, normalized to an average NW diameter of 30 nm at VSG = 3 V, and Vd = 50 mV, for a standard structure with 7 × 10 NWs stacked) and high chances of biomolecule interaction and detection. The use of silicon on insulator substrates with a low doped device layer significantly reduces leakage currents for excellent Ion/Ioff ratios >106 of particular importance for low power applications. When the nanowires are submerged in a liquid, they feature a gate all around architecture with improved electrostatics that provides steep subthreshold slopes (SS < 75 mV/dec), low drain induced barrier lowering (DIBL < 20 mV/V) and high transconductances (gm > 10 μS) while allowing for the entire surface area of the nanowire to be available for biomolecule sensing. The fabricated devices have small SiNW diameters (down to dNW ∼ 15–30 nm) in order to be fully depleted and provide also high surface to volume ratios for high sensitivities.en
dc.description.sponsorshipScience Foundation Ireland (SFI grant no. 09/IN.1/I2602.); European Commission (FP7 Semiconducting Nanowire Platform for Autonomous Sensors (SiNAPS) European Collaborative Project (Grant 257856), Integrated Project eBRAINSICT-25748)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBUITRAGO, E., BADIA, M. F.-B., GEORGIEV, Y. M., YU, R., LOTTY, O., HOLMES, J. D., NIGHTINGALE, A. M., GUERIN, H. M. & IONESCU, A. M. 2014. Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors. Sensors and Actuators B: Chemical, 199, 291-300. http://www.sciencedirect.com/science/article/pii/S092540051400375Xen
dc.identifier.doi10.1016/j.snb.2014.03.099
dc.identifier.endpage300en
dc.identifier.issn0925-4005
dc.identifier.journaltitleSensors and Actuators, B: Chemicalen
dc.identifier.startpage291en
dc.identifier.urihttps://hdl.handle.net/10468/2277
dc.identifier.volume199en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S092540051400375X
dc.rights© 2014 Elsevier B.V. © 2014, This submitted version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ To access the published work, see http://dx.doi.org/10.1016/j.snb.2014.03.099en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectISFETen
dc.subjectSensoren
dc.subjectFinFETen
dc.subjectSiNWen
dc.subjectGAAen
dc.subjectIon sensitive field effect transistoren
dc.subjectBiomoleculesen
dc.subjectGate dielectricsen
dc.subjectHafnium oxidesen
dc.subjectLeakage currentsen
dc.subjectNanowiresen
dc.subjectSensorsen
dc.subjectSilicon on insulator technologyen
dc.subjectBiomolecule interactionsen
dc.subjectDrain-induced barrier loweringen
dc.subjectElectrical characterizationen
dc.subjectHigh surface-to-volume ratioen
dc.subjectSilicon-on-insulator substratesen
dc.subjectLiquidsen
dc.titleElectrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensorsen
dc.title.alternativeElectrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET for biosensing applicationsen
dc.typeArticle (peer-reviewed)en
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