Avalanche breakdown timing statistics for silicon singlephoton avalanche diodes

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dc.contributor.authorPetticrew, J. D.
dc.contributor.authorDimler, S. D.
dc.contributor.authorZhou, X.
dc.contributor.authorMorrison, Alan P.
dc.contributor.authorTan, C. H.
dc.contributor.authorNg, J. S.
dc.contributor.funderScience and Technology Facilities Councilen
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2018-01-09T12:21:50Z
dc.date.available2018-01-09T12:21:50Z
dc.date.issued2017-12-04
dc.date.updated2018-01-09T12:08:29Z
dc.description.abstractSilicon-based single photon avalanche diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has, however, been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this paper, we present a statistical simulation model for silicon SPADs that is capable of predicting breakdown probability, mean time to breakdown, and timing jitter. Our model inherently incorporates carriers’ dead space due to phonon scattering and allows for nonuniform electric fields. Model validation included avalanche gain, excess noise factor, breakdown voltage, breakdown probability, and timing statistics. Simulating an n-on-p and a p-on-n SPAD design using our model, we found that the n-on-p design offers significantly improved mean time to breakdown and timing jitter characteristics. For a breakdown probability of 0.5, mean time to breakdown and timing jitter from the n-on-p design were 3 and 4 times smaller compared to those from the p-on-n design. The data reported in this paper are available from the ORDA digital repository (DOI: 10.15131/shef.data.4823248).en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPetticrew, J. D., Dimler, S. J., Zhou, X., Morrison, A. P., Tan, C. H. and Ng, J. S. (2018) 'Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes', IEEE Journal of Selected Topics in Quantum Electronics, 24(2), 3801506 (6pp). doi: 10.1109/JSTQE.2017.2779834en
dc.identifier.doi10.1109/JSTQE.2017.2779834
dc.identifier.endpage3801506-6en
dc.identifier.issn1077-260X
dc.identifier.issued2en
dc.identifier.journaltitleIEEE Journal of Selected Topics In Quantum Electronicsen
dc.identifier.startpage3801506-1en
dc.identifier.urihttps://hdl.handle.net/10468/5249
dc.identifier.volume24en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/STFC/ST/N000145/1/GB/Linear Geiger Mode Detector Technology for Time Resolved Spectral Measurements/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/K503149/1/GB/DTA - University of Sheffield/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/L505055/1/GB/DTA - University of Sheffield/en
dc.rights© 2017 IEEE. This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectElectric breakdownen
dc.subjectElectric fieldsen
dc.subjectImpact ionizationen
dc.subjectMathematical modelen
dc.subjectPhotonicsen
dc.subjectSiliconen
dc.subjectTiming jitteren
dc.subjectAvalanche breakdownen
dc.subjectavalanche photodiodesen
dc.subjectJitteren
dc.titleAvalanche breakdown timing statistics for silicon singlephoton avalanche diodesen
dc.typeArticle (peer-reviewed)en
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